公开(公告)号：EP1049144A1

公开(公告)日：2000-11-02

申请号：EP98961378.1

申请日：1998-12-17

申请人： Matsushita Electronics Corporation

发明人： TAKETOMI, Yoshinao ,  KURAMASU, Keizaburo ,  IZUCHI, Masumi ,  SATANI, Hiroshi ,  TSUTSU, Hiroshi ,  NISHITANI, Hikaru ,  NISHITANI, Mikihiko ,  GOTO, Masashi ,  MINO, Yoshiko

IPC分类号： H01L21/20 ,  H01L29/786

CPC分类号： H01L21/02532 ,  H01L21/02609 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02689 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/316 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203 is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.