公开(公告)号：EP2541612A1

公开(公告)日：2013-01-02

申请号：EP10846613.7

申请日：2010-11-11

申请人： Mitsubishi Heavy Industries, Ltd. ,  National Institute of Advanced Industrial Science and Technology

发明人： MIZUNO, Koichi ,  TAKEUCHI, Yoshiaki ,  SAKAI, Satoshi ,  TSURUGA, Shigenori ,  MATSUI, Takuya ,  KONDO, Michio ,  JIA, Haijun

IPC分类号： H01L31/04

CPC分类号： H01L31/022466 ,  H01L31/022483 ,  H01L31/076 ,  Y02E10/548

摘要： Provided is a highly-efficient triple-junction thin-film photoelectric conversion device in which the short-circuit current value obtained at each photoelectric conversion layer is equalized, and which has a high haze factor. A thin-film photoelectric conversion device (100) is provided with a transparent electrode layer (2) and three silicon photoelectric conversion layers (91, 92, 93), in said order, on a substrate (1). The transparent electrode layer (2) has at least one opening section (5), which exposes the surface of the substrate (1) and which was formed by means of the etching process, and a haze factor of 60% or more in relation to the light in the broad wavelength region of the transparent electrode layer (2).

摘要翻译： 提供了一种高效率的三联薄膜光电转换装置，其中在每个光电转换层获得的短路电流值相等，并且具有高雾度因子。 薄膜光电转换装置（100）在基板（1）上设置有透明电极层（2）和三个硅光电转换层（91,92,93）。 透明电极层（2）具有至少一个开口部分（5），其暴露基板（1）的表面，并且通过蚀刻工艺形成，并且相对于 透明电极层（2）的宽波长区域的光。