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公开(公告)号：EP4299517A1
公开(公告)日：2024-01-03
申请号：EP22759557.6
申请日：2022-02-21
发明人： FUJITA Toshiaki , ADACHI Masaki
摘要： A nitride semiconductor material having low lattice thermal conductivity and a heat flow switching element including the same are provided. The nitride semiconductor material according to the present invention is a metal nitride represented by M-Si-N-Te (where M represents at least one kind of transition metal element, and Te represents an arbitrary element), and has a thermal effusivity of less than 2000 Ws 0.5 /m 2 K. In particular, the M is at least one of Cr, Mn, Ni, Mo, and W. In addition, a heat flow switching element according to the present invention includes an N-type semiconductor layer 3, an insulator layer 4 formed on the N-type semiconductor layer, and a P-type semiconductor layer 5 formed on the insulator layer, wherein at least one of the N-type semiconductor layer and the P-type semiconductor layer is formed from the nitride semiconductor material described above.
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2.发明公开
公开(公告)号：EP4299516A1
公开(公告)日：2024-01-03
申请号：EP22759556.8
申请日：2022-02-21
发明人： ADACHI Masaki , FUJITA Toshiaki
摘要： Provided are a nitride insulator material having low lattice thermal conductivity, a method for producing the same, a heat flow switching element, and a thermoelectric conversion element. The nitride insulator material of the present invention consists of a metal nitride represented by the general formula: M-Si-N-Te (where M represents at least one of Ta and Hf, and Te is an arbitrary element) and has a nanocrystalline structure. In addition, the heat flow switching element of the present invention includes: an N-type semiconductor layer 3; an insulator layer 4 laminated on the N-type semiconductor layer; and a P-type semiconductor layer 5 laminated on the insulator layer, wherein the insulator layer is made of the above-described nitride insulator material.
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公开(公告)号：EP4109062A1
公开(公告)日：2022-12-28
申请号：EP21756947.4
申请日：2021-02-17
发明人： FUJITA Toshiaki , ARAI Koya
摘要： Provided is a heat flow switching element that has a larger change in thermal conductivity, has excellent thermal responsiveness, and is capable of directly detecting a temperature change. The heat flow switching element according to the present invention includes: a heat flow control element part 10 including an N-type semiconductor layer 3, an insulator layer 4 laminated on the N-type semiconductor layer, and a P-type semiconductor layer 5 laminated on the insulator layer; and thermosensitive element parts 11A and 11B joined to the heat flow control element part. In addition, the thermosensitive element parts include: a thin-film thermistor portion made of a thermistor material; and a pair of counter electrodes formed facing each other on an upper side and/or a lower side of the thin-film thermistor portion, and the thin-film thermistor portion is laminated on an upper side and/or a lower side of the heat flow control element part.
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