公开(公告)号：EP3173778A4

公开(公告)日：2018-02-21

申请号：EP15824136

申请日：2015-07-21

申请人： NAT INSTITUTE FOR MATERIALS SCIENCE

发明人： KAWAKITA JIN ,  SHINOHARA TADASHI ,  CHIKYO TOYOHIRO ,  NABATAME TOSHIHIDE ,  OHI AKIHIKO ,  OHKI TOMOKO

IPC分类号： G01N27/26 ,  G01N17/04 ,  G01N27/12 ,  G01N27/30

CPC分类号： G01N27/048 ,  G01N17/00 ,  G01N17/04 ,  G01N27/045 ,  G01N27/121 ,  G01N27/223

摘要： The present invention improves the sensitivity and the responsiveness of a dryness/wetness responsive sensor utilizing a galvanic current, allowing for downsizing of the dryness/wetness responsive sensor. Instead of the conventional structure in which an anode electrode and a cathode electrode are stacked with an intervening insulator, the present invention employs a structure in which both electrodes run in juxtaposition with each other on an insulating substrate in the form of, for example, a comb-shaped electrode as shown in the drawing. By utilizing a semiconductor manufacturing process or any other micro/nano-fabrication technology, an inter-electrode distance can be extremely shortened as compared with the conventional sensors, allowing enhancing the sensitivity per unit footprint of the electrodes. Accordingly, a decrease in the size of the dryness/wetness responsive sensor can be easily achieved.