公开(公告)号：EP0703476A3

公开(公告)日：1997-10-15

申请号：EP95110028.8

申请日：1995-06-27

申请人： NEC CORPORATION

发明人： Takeuchi, Takeshi, c/o NEC Corp. ,  Komatsu, Keiro, c/o NEC Corp. ,  Hamamoto, Kiichi, c/o NEC Corp. ,  Taguchi, Kenko, c/o NEC Corp. ,  Yamamoto, Masako, c/o NEC Corp.

IPC分类号： G02B6/42 ,  H01L31/109 ,  H01L21/20

CPC分类号： B82Y20/00 ,  G02B6/42 ,  H01L31/035236 ,  H01L31/109

摘要： Disclosed herein is a semiconductor optical waveguide-integrated light-receiving device comprising a waveguide-type photodetector and a passive optical waveguide which are selectively formed on the same substrate, wherein the width of mask for a selective growth is varied along the waveguiding direction so as to simultaneously form core layers which differ from each other in absorption edge wavelength. The core layer may be formed with an MQW layer. It is also featured that waveguide width of the photodetector is made larger than the waveguide width of the optical waveguide. The photodetector and the optical waveguide may be buried by an n--InP layer.

摘要翻译： 本文公开了一种半导体光波导集成光接收装置，其包括选择性地形成在同一基板上的波导型光电检测器和无源光波导，其中用于选择性增长的掩模的宽度沿着波导方向变化，从而 同时形成吸收边缘波长彼此不同的芯层。 芯层可以由MQW层形成。 还具有光检测器的波导宽度大于光波导的波导宽度的特征。 光检测器和光波导可以被n-InP层掩埋。

公开(公告)号：EP0703476A2

公开(公告)日：1996-03-27

申请号：EP95110028.8

申请日：1995-06-27

申请人： NEC CORPORATION

发明人： Takeuchi, Takeshi, c/o NEC Corp. ,  Komatsu, Keiro, c/o NEC Corp. ,  Hamamoto, Kiichi, c/o NEC Corp. ,  Taguchi, Kenko, c/o NEC Corp. ,  Yamamoto, Masako, c/o NEC Corp.

IPC分类号： G02B6/42 ,  H01L31/109 ,  H01L21/20

CPC分类号： B82Y20/00 ,  G02B6/42 ,  H01L31/035236 ,  H01L31/109

摘要： Disclosed herein is a semiconductor optical waveguide-integrated light-receiving device comprising a waveguide-type photodetector and a passive optical waveguide which are selectively formed on the same substrate, wherein the width of mask for a selective growth is varied along the waveguiding direction so as to simultaneously form core layers which differ from each other in absorption edge wavelength. The core layer may be formed with an MQW layer. It is also featured that waveguide width of the photodetector is made larger than the waveguide width of the optical waveguide. The photodetector and the optical waveguide may be buried by an n--InP layer.