摘要:
A laser amplifier and/or oscillator comprise a gain medium including rare earth dopant in a host medium. Ions of the rare earth dopant has an energy level structure including a ground level and a pair of laser upper level and laser lower levels between which a stimulated transition is to be produced after production of a population inversion between the pair of laser upper and laser lower levels. A first exciting light source is coupled to the gain medium for introducing first exciting light to said gain medium to produce said population inversion. A second exciting light source is coupled to the gain medium for introducing second exciting light source to the gain medium to raise the rare earth dopant ions from the ground level to the laser lower level.
摘要:
Two semiconductor laser light sources (2,6) for outputting light of two properly selected wavelengths are employed as excitation light sources. That is, as excitation light sources, there are used a first semiconductor laser excitation light source (2) for exciting ion from a base level to a laser low level or an energy level higher than the laser low level and a second semiconductor laser excitation light source (6) having a wavelength different from that of the first excitation light source for exciting ion from a laser low level to a laser high level. For example, an amplification fiber (1) uses a fluoro zirconate glass as a base material. Two multiple wavelength couplers (3,7) are disposed at the input side of the amplification fiber (1), The multiple wavelength couplers (3,7) are connected to the first excitation light source (2) and the second excitation light source (6), respectively. An isolator (4) is disposed at a signal input port at the further input side of the multiple wavelength couplers (3,7), and an another isolator (5) is disposed at an output port of the amplification fiber (1).
摘要:
A laser crystal (1) is formed on a substrate (2) in a solid-state laser device. The laser crystal oscillates laser beam from a second end face (1b) when an excitation beam is projected to a first end face (1a). An excitation beam emission element (5) emitting the excitation beam is provided for the solid-state laser device. A waveguide path (3) is formed on the substrate. The excitation beam is transmitted through the waveguide path. The waveguide path has a first end portion on which the excitation beam emitted by the excitation beam emission element impinges and a second end portion which opposes the first end face of the laser crystal. The excitation beam is emitted from the second end portion.