公开(公告)号：EP1003047B1

公开(公告)日：2005-04-06

申请号：EP99307640.5

申请日：1999-09-28

申请人： NEC CORPORATION ,  Fuji Electric Co. Ltd. ,  MITSUBISHI ELECTRIC CORPORATION ,  National Institute of Advanced Industrial Science and Technology, Independent Administrative Institution

发明人： Makano, Takashi, NEC Corporation ,  Konishi, Yoshinori, c/o Fuji Electric Co., Ltd. ,  Kobayashi, Keiichiro, c/o Mitsubishi Elec. Corp. ,  Kawasaki, Masashi, Nat. Inst. for Adv.Int.dis. Res ,  Tokura, Yoshinori, Nat.Inst. for Adv.Interdis.Res. ,  Izumi, Makoto, Nat. Inst. for Adv. Interdis. Res.

IPC分类号： G01R33/09

CPC分类号： H01F10/28 ,  G01R33/09 ,  H01F10/1933

公开(公告)号：EP1003047A2

公开(公告)日：2000-05-24

申请号：EP99307640.5

申请日：1999-09-28

申请人： NEC CORPORATION ,  Fuji Electric Co. Ltd. ,  ANGSTROM TECHNOLOGY PARTNERSHIP ,  Agency of Industrial Science and Technology of Ministry of International Trade and Industry ,  MITSUBISHI ELECTRIC CORPORATION

发明人： Makano, Takashi, NEC Corporation ,  Konishi, Yoshinori, c/o Fuji Electric Co., Ltd. ,  Kobayashi, Keiichiro, c/o Mitsubishi Elec. Corp. ,  Kawasaki, Masashi, Nat. Inst. for Adv.Int.dis. Res ,  Tokura, Yoshinori, Nat.Inst. for Adv.Interdis.Res. ,  Izumi, Makoto, Nat. Inst. for Adv. Interdis. Res.

IPC分类号： G01R33/09

CPC分类号： H01F10/28 ,  G01R33/09 ,  H01F10/1933

摘要： A magneto-resistance effect element includes an oxide substrate(1) having on its surface steps(2) of atomic layer level and on the substrate an epitaxially grown ferromagnetic oxide thin film, the thin film formed on the atomic layer level steps having an antiphased domain boundary.

摘要翻译： 磁阻效应元件包括在其表面上具有原子层级的步骤（2）的氧化物衬底（1），并且在衬底上具有外延生长的铁磁性氧化物薄膜，所述薄膜在原子层级上形成具有反相 域边界。