公开(公告)号：EP0880184A2

公开(公告)日：1998-11-25

申请号：EP98304110.4

申请日：1998-05-22

申请人： NGK INSULATORS, LTD.

发明人： Imanishi, Yuichiro ,  Miyoshi, Makoto ,  Watenabe, Tetsuo ,  Kushibiki, Keiko ,  Shinohara, Kazuhiko ,  Kobayashi, Masakuzu ,  Furuya, Kenji

IPC分类号： H01L35/30 ,  H01L35/34

CPC分类号： H01L35/08 ,  H01L35/32 ,  H01L35/34

摘要： A thermoelectric conversion module including a honeycomb structural body 3 made of an electrically insulating material, N type and P type semiconductor elements 1 and 2 inserted into through holes formed in the honeycomb structural body 3, electrically insulating filler members 4 filled in spaces between the semiconductor elements and inner walls of the through holes such that the semiconductor elements are fixed in position within respective through holes, and electrodes 7 connecting end surfaces of the semiconductor elements on polished end surfaces of the honeycomb structural body such that N type and P type semiconductor elements are alternately connected in series. According to the invention, the electrically insulating filler members are made of an inorganic adhesive of alkali metal silicate or sol-gel glass. Since undesired heat dissipation and heat transfer through adjacent semiconductor elements can be prevented and undesired oxidation and dissipation of the semiconductor elements during a usage can be effectively removed, a high output power can be attained stably for a long life time when the thermoelectric conversion module according to the invention is used an electric power generating system using an exhausted heat. The higher and lower temperature side surfaces of the module can be shaped into any desired configuration.

公开(公告)号：EP0880184A3

公开(公告)日：2000-09-13

申请号：EP98304110.4

申请日：1998-05-22

申请人： NGK INSULATORS, LTD.

发明人： Imanishi, Yuichiro ,  Miyoshi, Makoto ,  Watenabe, Tetsuo ,  Kushibiki, Keiko ,  Shinohara, Kazuhiko ,  Kobayashi, Masakuzu ,  Furuya, Kenji

IPC分类号： H01L35/30 ,  H01L35/34 ,  H01L35/08 ,  H01L35/32

CPC分类号： H01L35/08 ,  H01L35/32 ,  H01L35/34

摘要： A thermoelectric conversion module including a honeycomb structural body 3 made of an electrically insulating material, N type and P type semiconductor elements 1 and 2 inserted into through holes formed in the honeycomb structural body 3, electrically insulating filler members 4 filled in spaces between the semiconductor elements and inner walls of the through holes such that the semiconductor elements are fixed in position within respective through holes, and electrodes 7 connecting end surfaces of the semiconductor elements on polished end surfaces of the honeycomb structural body such that N type and P type semiconductor elements are alternately connected in series. According to the invention, the electrically insulating filler members are made of an inorganic adhesive of alkali metal silicate or sol-gel glass. Since undesired heat dissipation and heat transfer through adjacent semiconductor elements can be prevented and undesired oxidation and dissipation of the semiconductor elements during a usage can be effectively removed, a high output power can be attained stably for a long life time when the thermoelectric conversion module according to the invention is used an electric power generating system using an exhausted heat. The higher and lower temperature side surfaces of the module can be shaped into any desired configuration.

摘要翻译： 包括由电绝缘材料制成的蜂窝结构体3的热电转换模块，插入到形成在蜂窝结构体3中的通孔中的N型和P型半导体元件1和2，填充在半导体 元件和内壁，使得半导体元件固定在相应的通孔内的适当位置;以及电极7，其将蜂窝结构体的抛光端面上的半导体元件的端面连接成N型和P型半导体元件 交替地串联连接。 根据本发明，电绝缘填料构件由碱金属硅酸盐或溶胶 - 凝胶玻璃的无机粘合剂制成。 由于可以防止不期望的散热和通过相邻的半导体元件的热传递，并且可以有效地去除使用期间的半导体元件的不期望的氧化和耗散，所以当热电转换模块 本发明使用了使用排热的发电系统。 模块的高温和低温侧表面可以成形为任何所需的构造。

公开(公告)号：EP0948061A2

公开(公告)日：1999-10-06

申请号：EP99302011.4

申请日：1999-03-16

申请人： NGK INSULATORS, LTD. ,  NISSAN MOTOR COMPANY LIMITED

发明人： Miyoshi, Makoto ,  Imanishi, Yuichiro ,  Kushibiki, Keiko ,  Kobayashi, Masakazu ,  Furuya, Kenji ,  Shinohara, Kazuhiko

IPC分类号： H01L35/18

CPC分类号： H01L35/18 ,  H01L35/22

摘要： A p-type thermoelectric converting substance used as a p-type semiconductor in a thermoelectric converting module essentially consisting of a substance expressed by a chemical formula of CoSb x Sn y or CoSb x Ge y (2.7 3), and containing a small amount of oxygen z defined by 2(x+y-3)≥z. An amount of oxygen z is preferably limited such that an amount of the oxygen is not higher than 0.1 molecules per 1 molecule of Co. An alloy ingot essentially consisting of CoSb x Sn y or CoSb x Ge y (2.7 3) is ground to obtain a raw material powder. Then, the powder is cast into a mold, and the mold is sintered under a non-oxidizing atmosphere or reducing atmosphere. The thus obtained substance reveals the p-conductivity type in a stable manner over a wide temperature range and has excellent thermoelectric converting properties.

摘要翻译： 在热电转换模块中用作p型热电转换材料的p型热电转换材料基本上由化学式CoSbxSny或CoSbxGey（2.7 3），并含有由2（x + y-3）≥z定义的少量氧z。 优选限制氧量z使得氧的量不高于每1分子Co 0.1个分子。基本上由CoSbxSny或CoSbxGey组成的合金锭（2.7 3）研磨以获得原料粉末。 然后，将该粉末浇铸到模具中，并将模具在非氧化气氛或还原气氛下烧结。 如此获得的物质在宽的温度范围内以稳定的方式显示出p型导电类型，并且具有优异的热电转换性能。

公开(公告)号：EP0948061A3

公开(公告)日：1999-12-29

申请号：EP99302011.4

申请日：1999-03-16

申请人： NGK INSULATORS, LTD. ,  NISSAN MOTOR COMPANY LIMITED

发明人： Miyoshi, Makoto ,  Imanishi, Yuichiro ,  Kushibiki, Keiko ,  Kobayashi, Masakazu ,  Furuya, Kenji ,  Shinohara, Kazuhiko

IPC分类号： H01L35/18

CPC分类号： H01L35/18 ,  H01L35/22

摘要： A p-type thermoelectric converting substance used as a p-type semiconductor in a thermoelectric converting module essentially consisting of a substance expressed by a chemical formula of CoSb x Sn y or CoSb x Ge y (2.7 3), and containing a small amount of oxygen z defined by 2(x+y-3)≥z. An amount of oxygen z is preferably limited such that an amount of the oxygen is not higher than 0.1 molecules per 1 molecule of Co. An alloy ingot essentially consisting of CoSb x Sn y or CoSb x Ge y (2.7 3) is ground to obtain a raw material powder. Then, the powder is cast into a mold, and the mold is sintered under a non-oxidizing atmosphere or reducing atmosphere. The thus obtained substance reveals the p-conductivity type in a stable manner over a wide temperature range and has excellent thermoelectric converting properties.

摘要翻译： 在热电转换模块中用作p型半导体的p型热电转换物质，其主要由化学式CoSbxSny或CoSbxGey表示的物质（2.7 3），并含有少量由2（x + y-3）≥z定义的氧z。 优选限制氧的量，使得氧的量不高于每1分子公司0.1分子。基本上由CoSbxSny或CoSbxGey组成的合金锭（2.7 3）粉碎，得到原料粉末。 然后将粉末浇注到模具中，并且在非氧化气氛或还原气氛下烧结模具。 由此获得的物质在宽的温度范围内以稳定的方式显示出p型导电型，并且具有优异的热电转换性能。

公开(公告)号：EP0773592A2

公开(公告)日：1997-05-14

申请号：EP96308174.0

申请日：1996-11-12

申请人： NGK INSULATORS, LTD.

发明人： Imanishi, Yuichiro ,  Miyoshi, Makoto ,  Watanabe, Tetsuo ,  Kushibiki, Keiko ,  Shinohara, Kazuhiko ,  Kobayashi, Masakazu ,  Furuya, Kenji

IPC分类号： H01L35/32

CPC分类号： H01L35/32 ,  H01L35/34

摘要： A thermoelectric conversion module having a large capacity and a curved surface is manufactured by immersing a honeycomb structural body having a number of through holes, openings of every other through holes being closed by clogging members, into a semiconductor material melt of one conductivity type to suck the semiconductor material melt into through holes whose openings are not closed, cooling the thus sucked semiconductor material melt to form semiconductor elements of one conductivity type, immersing again the honeycomb structural body after removing said clogging members into a semiconductor material melt of the other conductivity type to suck the semiconductor material melt into the through holes, cooling the thus sucked semiconductor material melt to form semiconductor elements of the other conductivity type, cutting the honeycomb structural body into a plurality of thermoelectric conversion module main bodies, and providing metal electrodes of both surfaces of a thermoelectric conversion module main body such that alternate semiconductor elements of one and the other conductivity types are connected in cascade.

摘要翻译： 通过将具有多个通孔的蜂窝结构体浸渍到一个导电类型的半导体材料熔体中，将具有多个通孔的每隔一个通孔的堵塞孔的开口浸入到具有大容量的弯曲表面的热电转换模块 半导体材料熔化成开口未闭合的通孔，冷却由此被吸引的半导体材料熔融物形成一种导电型的半导体元件，在将所述堵塞件移除到另一种导电类型的半导体材料熔体中之后，再次将蜂窝结构体再次浸没 将半导体材料熔体吸入通孔中，冷却由此吸收的半导体材料熔体形成另一种导电类型的半导体元件，将蜂窝结构体切割成多个热电转换模块主体，并且提供两个表面的金属电极 的热电 c转换模块主体，使得一个和另一个导电类型的交替半导体元件级联连接。