公开(公告)号：EP1640340A1

公开(公告)日：2006-03-29

申请号：EP04746581.0

申请日：2004-06-28

申请人： NIPPON CHEMICAL INDUSTRIAL COMPANY LIMITED

发明人： ISHIKAWA, Kenichi, c/o Nippon Chemical Ind. Co Ltd ,  YOKOI, Keizou, Nippon Chemical Industrial Co.,Ltd ,  TAKEUCHI, Kosuke, Nippon Chemical Ind. Co., Ltd. ,  KURITA, Yutaka , Nippon Chemical Industrial CoLtd ,  UCHIYAMA, Heiji, Nippon Chemical Industrial Co Ltd

IPC分类号： C01B25/238 ,  C01B25/20

CPC分类号： C01B25/18 ,  C01B25/234

摘要： High purity phosphoric acid having an Sb content of 200 ppb or less and a sulfide ion content of 200 ppb or less as impurity contents on a 85 weight percent H 3 PO 4 basis. The high purity phosphoric acid is useful as an etching solution for semiconductor devices having a silicon nitride film, an etching solution for liquid crystal display panels having an alumina film, a metallic aluminum etching solution, an alumina etching solution for ceramics, a raw material of phosphate glass for optical fiber, a food additive, and so forth. A metallic material having low capability of forming a lithium compound penetrates through the whole thickness of the active material layer 5.

摘要翻译： 在85重量％H 3 PO 4的基础上，Sb含量为200ppb以下，硫化物离子含量为200ppb以下的高纯度磷酸作为杂质含量。 高纯度磷酸可用作具有氮化硅膜的半导体器件的蚀刻溶液，具有氧化铝膜的液晶显示面板的蚀刻溶液，金属铝蚀刻溶液，陶瓷用氧化铝蚀刻溶液，原料 光纤用磷酸盐玻璃，食品添加剂等。 形成锂化合物的能力低的金属材料穿透活性物质层5的整个厚度。

公开(公告)号：EP1640340B1

公开(公告)日：2012-08-01

申请号：EP04746581.0

申请日：2004-06-28

申请人： NIPPON CHEMICAL INDUSTRIAL COMPANY LIMITED

发明人： ISHIKAWA, Kenichi, c/o Nippon Chemical Ind. Co Ltd ,  YOKOI, Keizou, Nippon Chemical Industrial Co.,Ltd ,  TAKEUCHI, Kosuke, Nippon Chemical Ind. Co., Ltd. ,  KURITA, Yutaka , Nippon Chemical Industrial CoLtd ,  UCHIYAMA, Heiji, Nippon Chemical Industrial Co Ltd

IPC分类号： C01B25/238 ,  C01B25/20

CPC分类号： C01B25/18 ,  C01B25/234

摘要： A high purity phosphoric acid, characterized in that it has an impurity content wherein the content of Sb is 200 ppb or less and the content of a sulfide ion is 200 ppb or less, in terms of a product having a H3PO4 concentration of 85 wt %. The above high purity phosphoric acid is useful as an etching fluid for a semiconductor element having a silicon nitride film, an etching fluid for a liquid crystalline display panel having an alumina film, an etching fluid for metallic aluminum, an etching fluid for alumina for a ceraminc, a material of a phosphate glass for an optical fiber glass, a food additive and the like.