公开(公告)号：EP3115813A4

公开(公告)日：2017-08-30

申请号：EP15757973

申请日：2015-03-04

申请人： NIPPON TELEGRAPH & TELEPHONE

发明人： KAMEI SHIN ,  JIZODO MAKOTO ,  FUKUDA HIROSHI ,  KIKUCHI KIYOFUMI

IPC分类号： G02B6/126 ,  G02B6/12 ,  G02B6/122 ,  G02B6/14 ,  G02B6/27 ,  G02B6/28

CPC分类号： G02B6/126 ,  G02B6/1228 ,  G02B6/14 ,  G02B6/2766 ,  G02B6/2861 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12147

摘要： Polarization rotators of conventional techniques require forming a silicon nitride layer, which is not employed in usual fabrication of a silicon waveguide circuit. In order to employ a polarization rotator function in an optical integrated circuit, a process of forming a silicon nitride layer is added just for that purpose. This increases the fabrication time and complicates the fabrication equipment. In a polarization rotator of the present invention, the waveguide width of a center core portion of a polarization converter (104) is made small. Thus, the intensity of an optical wave does not concentrate only at the center core portion and is more influenced by structural asymmetry. With the configuration of the polarization rotator of the present invention, it is possible to efficiently cause polarization conversion with a structure including only a silicon waveguide and no silicon nitride layer or the like formed thereon.

摘要翻译： 传统技术的偏振旋转器需要形成氮化硅层，该氮化硅层在通常制造硅波导电路中不使用。 为了在光学集成电路中使用偏振旋转器功能，正好为此添加了形成氮化硅层的工艺。 这增加了制造时间并使制造设备复杂化。 在本发明的偏振旋转器中，使偏振转换器（104）的中心芯部分的波导宽度较小。 因此，光波的强度不仅仅集中在中央核心部分，而且更受结构不对称性的影响。 利用本发明的偏振旋转器的配置，可以利用仅包括硅波导并且不在其上形成氮化硅层等的结构来有效地进行偏振转换。