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公开(公告)号：EP0847116A3
公开(公告)日：1998-09-02
申请号：EP98102645.3
申请日：1993-03-04
CPC分类号： H01S5/12 , G02B6/124 , G02B2006/12107 , G02B2006/12121 , H01S5/0425 , H01S5/06256 , H01S5/06258 , H01S5/1218 , H01S5/1225
摘要： A semiconductor laser comprises first and second distributed Bragg reflector diffraction gratings (10a,10b) being intervened by an active region having no diffraction grating; said first and second diffraction gratings (10a,10b) each have a plurality of repeating unit regions repeated at respective periods, thus forming respective modulation periods (Mf,Mr); in each of the repeating unit regions the length of the single period varies in the direction in which light transmits, continuously or at intervals, thereby varying the optical reflectivity of the diffraction gratings (10a,10b) depending on its position in each of its said repeating unit regions; said first and second diffraction gratings reflect light having wavelengths (λ 1 ,λ 2 ,.. and λ' 1 ,λ 2 ,...) slightly differing from each other; and said diffraction grating extends by at least two modulation periods. The application of voltages on said diffraction gratings enables coarse and fine tuning of lasing the wavelength.
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2.发明公开Distributed reflector and wavelength-tunable semiconductor laser 失效Verteiler Reflektor und Halbleiterlaser mit abstimmbarerWellenlänge
公开(公告)号：EP0847116A2
公开(公告)日：1998-06-10
申请号：EP98102645.3
申请日：1993-03-04
CPC分类号： H01S5/12 , G02B6/124 , G02B2006/12107 , G02B2006/12121 , H01S5/0425 , H01S5/06256 , H01S5/06258 , H01S5/1218 , H01S5/1225
摘要： A semiconductor laser comprises first and second distributed Bragg reflector diffraction gratings (10a,10b) being intervened by an active region having no diffraction grating; said first and second diffraction gratings (10a,10b) each have a plurality of repeating unit regions repeated at respective periods, thus forming respective modulation periods (Mf,Mr); in each of the repeating unit regions the length of the single period varies in the direction in which light transmits, continuously or at intervals, thereby varying the optical reflectivity of the diffraction gratings (10a,10b) depending on its position in each of its said repeating unit regions; said first and second diffraction gratings reflect light having wavelengths (λ 1 ,λ 2 ,.. and λ' 1 ,λ 2 ,...) slightly differing from each other; and said diffraction grating extends by at least two modulation periods. The application of voltages on said diffraction gratings enables coarse and fine tuning of lasing the wavelength.
摘要翻译： 半导体激光器包括由没有衍射光栅的有源区插入的第一和第二分布布拉格反射器衍射光栅（10a，10b）; 所述第一和第二衍射光栅（10a，10b）各自具有在各个周期重复的多个重复单位区域，从而形成相应的调制周期（Mf，Mr）; 在每个重复单元区域中，单个周期的长度在光线连续或间隔的方向上变化，从而根据其衍射光栅（10a，10b）的每个中的位置来改变衍射光栅（10a，10b）的光学反射率 重复单位区域; 所述第一和第二衍射光栅反射具有彼此稍微不同的波长（λ1，λ2，...和λ'1，λ2，...）的光; 并且所述衍射光栅延伸至少两个调制周期。 在所述衍射光栅上施加电压使得能够粗调和微调激光的波长。
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公开(公告)号：EP0559192B1
公开(公告)日：1999-06-02
申请号：EP93103480.5
申请日：1993-03-04
CPC分类号： H01S5/12 , G02B6/124 , G02B2006/12107 , G02B2006/12121 , H01S5/0425 , H01S5/06256 , H01S5/06258 , H01S5/1218 , H01S5/1225
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4.发明公开Distributed reflector and wavelength-tunable semiconductor laser 失效Verteilter Reflektor und Halbleiterlaser mit abstimmbarerWellenlänge。
公开(公告)号：EP0559192A2
公开(公告)日：1993-09-08
申请号：EP93103480.5
申请日：1993-03-04
CPC分类号： H01S5/12 , G02B6/124 , G02B2006/12107 , G02B2006/12121 , H01S5/0425 , H01S5/06256 , H01S5/06258 , H01S5/1218 , H01S5/1225
摘要： The distributed reflector includes a substrate (1) and at least one optical waveguide formed on the substrate and having a refractive index larger than the substrate and at least one optical confinement layer (3) having a refractive index smaller than the optical waveguide layer. A diffractive grating (10a or 10b) is formed in at least one layer (2 or 3) constituting the optical waveguide. The diffractive grating has a structure of which at least one parameter defining optical reflectivity varies depending on its position, and is formed continuously for at least two periods, the period being approximately defined by the length of repeating unit region. The parameter may be pitch, coupling coefficient, bandgap composition, phase shift, etc. The semiconductor laser includes the distributed reflector which may be of a distributed reflector type or distributed feed back type and has distributed reflector regions (102, 103) and a phase adjustment region (104). The laser also has a cladding layer (4), a cap layer (5), current block layers (6, 7), electrodes (8, 9), connection portions (11), and grooves (30). Application of current or voltage to the refractive index of the active region (101) or inactive region (102, 103, 104) in which a diffractive grating is present or absent adjusts the refractive index thereof and enables coarse and fine adjustment of lasing wavelength. Comb-shaped electrodes may be used.
摘要翻译： 分布式反射器包括基板（1）和形成在基板上并具有大于基板的折射率的至少一个光波导和至少一个折射率小于光波导层的光限制层（3）。 衍射光栅（10a或10b）形成在构成光波导的至少一个层（2或3）中。 衍射光栅具有这样的结构，其中限定光反射率的至少一个参数根据其位置而变化，并且连续形成至少两个周期，该周期近似由重复单位区域的长度限定。 该参数可以是间距，耦合系数，带隙组成，相移等。半导体激光器包括分布式反射器，其可以是分布式反射器类型或分布式反馈型，并且具有分布式反射器区域（102,103）和相位 调整区域（104）。 激光器还具有包覆层（4），盖层（5），电流阻挡层（6,7），电极（8,9），连接部分（11）和凹槽（30）。 施加电流或电压对其中存在或不存在衍射光栅的有源区（101）或非活性区（102,103,104）的折射率调节其折射率，并且可以粗调和微调激光波长。 可以使用梳状电极。
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公开(公告)号：EP0847116B1
公开(公告)日：2002-01-30
申请号：EP98102645.3
申请日：1993-03-04
CPC分类号： H01S5/12 , G02B6/124 , G02B2006/12107 , G02B2006/12121 , H01S5/0425 , H01S5/06256 , H01S5/06258 , H01S5/1218 , H01S5/1225
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公开(公告)号：EP0559192A3
公开(公告)日：1993-09-22
申请号：EP93103480.5
申请日：1993-03-04
CPC分类号： H01S5/12 , G02B6/124 , G02B2006/12107 , G02B2006/12121 , H01S5/0425 , H01S5/06256 , H01S5/06258 , H01S5/1218 , H01S5/1225
摘要： The distributed reflector includes a substrate (1) and at least one optical waveguide formed on the substrate and having a refractive index larger than the substrate and at least one optical confinement layer (3) having a refractive index smaller than the optical waveguide layer. A diffractive grating (10a or 10b) is formed in at least one layer (2 or 3) constituting the optical waveguide. The diffractive grating has a structure of which at least one parameter defining optical reflectivity varies depending on its position, and is formed continuously for at least two periods, the period being approximately defined by the length of repeating unit region. The parameter may be pitch, coupling coefficient, bandgap composition, phase shift, etc. The semiconductor laser includes the distributed reflector which may be of a distributed reflector type or distributed feed back type and has distributed reflector regions (102, 103) and a phase adjustment region (104). The laser also has a cladding layer (4), a cap layer (5), current block layers (6, 7), electrodes (8, 9), connection portions (11), and grooves (30). Application of current or voltage to the refractive index of the active region (101) or inactive region (102, 103, 104) in which a diffractive grating is present or absent adjusts the refractive index thereof and enables coarse and fine adjustment of lasing wavelength. Comb-shaped electrodes may be used.
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