公开(公告)号：EP2230549B1

公开(公告)日：2015-08-12

申请号：EP08869482.3

申请日：2008-12-26

申请人： NTT Electronics Corporation ,  Nippon Telegraph and Telephone Corporation

发明人： ISHIBASHI, Tadao ,  MARUYAMA, Kazuhiro ,  KOBAYASHI, Kenji ,  AKEYOSHI, Tomoyuki ,  KIKUCHI, Nobuhiro ,  TSUZUKI, Ken ,  ISHIKAWA, Mitsuteru

IPC分类号： G02F1/025

CPC分类号： G02F1/025 ,  G02F2201/07

公开(公告)号：EP2230549A1

公开(公告)日：2010-09-22

申请号：EP08869482.3

申请日：2008-12-26

申请人： NTT Electronics Corporation ,  Nippon Telegraph and Telephone Corporation

发明人： ISHIBASHI, Tadao ,  MARUYAMA, Kazuhiro ,  KOBAYASHI, Kenji ,  AKEYOSHI, Tomoyuki ,  KIKUCHI, Nobuhiro ,  TSUZUKI, Ken ,  ISHIKAWA, Mitsuteru

IPC分类号： G02F1/025

CPC分类号： G02F1/025 ,  G02F2201/07

摘要： A semiconductor optical modulator according to the present invention includes a first semiconductor optical waveguide having a laminated structure including a core layer, a first clad layer, a second clad layer, and a barrier layer, the first clad layer and the second clad layer being disposed below and above the core layer, the barrier layer being inserted between the second clad layer and the core layer; a second semiconductor optical waveguide having a laminated structure in which the second clad layer has a p-type semiconductor penetrating locally through a n-type semiconductor in a laminated direction in the laminated structure of the first semiconductor optical waveguide; a first electrode connected to the first clad layer of the first semiconductor optical waveguide; and a second electrode electrically connecting the second clad layer of the first semiconductor optical waveguide and the p-type semiconductor of the second clad layer of the second semiconductor optical waveguide.

摘要翻译： 根据本发明的半导体光调制器包括具有层叠结构的第一半导体光波导，其包括芯层，第一覆盖层，第二覆盖层和阻挡层，第一覆盖层和第二覆盖层被布置 在芯层的下方和上方，阻挡层插入在第二覆盖层和芯层之间; 具有叠层结构的第二半导体光波导，其中所述第二覆盖层具有在所述第一半导体光波导的层叠结构中在层叠方向上局部穿过n型半导体的p型半导体; 连接到第一半导体光波导的第一包层的第一电极; 以及第二电极，电连接第一半导体光波导的第二包层和第二半导体光波导的第二包层的p型半导体。