RANDOM-ACCESS MEMORY DEVICES COMPRISING A DIODED BUFFER
    1.
    发明授权
    RANDOM-ACCESS MEMORY DEVICES COMPRISING A DIODED BUFFER 有权
    带缓冲二极管直接访问存储器安排

    公开(公告)号:EP1417686B1

    公开(公告)日:2008-01-02

    申请号:EP02760452.9

    申请日:2002-08-07

    申请人: NXP B.V.

    发明人: STOJANOV, Nikola

    IPC分类号: G11C11/418 G11C8/08

    CPC分类号: G11C8/08

    摘要: Random-access memory device (20) comprising select lines (27; 47), bit lines (21.1 - 21.3), and several RAM cells (22.1 - 22.3), each RAM cell (22.1 - 22.3) being connected to a corresponding one of said select lines (27; 47)and to a corresponding one of said bit lines (21.1 - 21.3). The random-access memory device (20) further comprises select buffers (26; 46) for selecting the read-out of one out of the select lines (27; 47) when receiving a selection signal. Each of the select buffers (26; 46) comprises an inverter (29) serving as driver. The inverter (29) is being followed by a diode (30) for limiting output voltage swings at the respective select line (27; 47).