公开(公告)号：EP2750198A1

公开(公告)日：2014-07-02

申请号：EP12827910.6

申请日：2012-08-27

申请人： National University Corporation Nara Institute of Science and Technology

发明人： HATAYAMA, Tomoaki ,  KOKETSU, Hidenori ,  TODOKORO, Yoshihiro

IPC分类号： H01L29/78 ,  H01L21/205 ,  H01L21/336 ,  H01L29/12

CPC分类号： H01L21/30604 ,  H01L21/0475 ,  H01L21/30617 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3083 ,  H01L29/045 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/4238 ,  H01L29/66068 ,  H01L29/7813

摘要： Provided are a technology that simply forms a particular crystal surface such as a {03-38} surface having high carrier mobility in trench sidewalls and a SiC semiconductor element where most of the trench sidewalls appropriate for a channel member are formed from {03-38} surfaces. A trench structure formed in a (0001) surface or an off-oriented surface of a (0001) surface with an offset angle 8° or lower of SiC is provided. The channel member is in the trench structure. At least 90% of the area of the channel member is a {03-38} surface or a surface that a {03-38} surface offset by an angle from -8° to 8 ° in the direction. Specifically, the trench sidewalls are finished to {03-38} surfaces by applying a thermal etching to a trench with (0001) surfaces of SiC. Thermal etching is conducted in a chlorine atmosphere above 800 °C with nitrogen gas as the carrier.

摘要翻译： 提供了一种简单地形成特定晶体表面的技术，例如在沟槽侧壁中具有高载流子迁移率的{03-38}表面，以及适合于沟道部件的大多数沟槽侧壁的SiC半导体元件由{03-38 }表面。 提供了形成在（0001）表面或（0001）表面的偏移角为8°或更小的SiC的表面的（0001）表面的沟槽结构。 通道构件处于沟槽结构。 通道构件的面积的至少90％是{03-38}表面或{01-38}表面在<1-100>方向偏移-8°至8°的角度的表面。 具体地说，通过对具有SiC的（0001）表面的沟槽进行热蚀刻，将沟槽侧壁完成到{03-38}表面。 用氮气作为载体，在800℃以上的氯气气氛中进行热蚀刻。