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    LITHOGRAPHIC PATTERNING METHOD AND SYSTEM THEREFORE
    2.
    发明公开
    LITHOGRAPHIC PATTERNING METHOD AND SYSTEM THEREFORE 审中-公开

    公开(公告)号：EP3667422A8

    公开(公告)日：2020-08-05

    申请号：EP18212663.1

    申请日：2018-12-14

    申请人： Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO

    发明人： MAAS, Diederik Jan ,  VAN DER DONCK, Jaques Cor Johan ,  VAN ES, Maarten Hubertus ,  WU, Chien-Ching ,  MATUROVÁ, Klára ,  WILLEKERS, Robert Wilhelm

    IPC分类号： G03F7/20

    摘要： Lithographic patterning method for creating features on a surface of a substrate, including the steps of: applying a resist material to the surface; performing resist processing steps, including at least: selectively exposing the resist material layer to a surface treatment step, wherein the resist material in the exposed locations is chemically modified; and developing the resist material layer to selectively remove the resist material locally. The method further comprises detecting, during or after the resist processing steps, a chemical modification of the resist material for monitoring or evaluating the processing steps. The step of detecting is performed by scanning the surface using a scanning probe microscopy device, and wherein the scanning includes contacting the surface with the probe tip in a probing area. The probing area coincides with at least one location of the exposed locations and non-exposed locations, for detecting the chemical modification. The document further describes a system.