公开(公告)号：EP1672086A1

公开(公告)日：2006-06-21

申请号：EP04787710.5

申请日：2004-09-08

申请人： Nikko Materials Company, Limited

发明人： SHINDO, Yuichiro, Nikko Materials Co., Ltd. ,  YAMAKOSHI, Yasuhiro, Nikko Materials Co., Ltd.

IPC分类号： C22C19/03 ,  C23C14/34

CPC分类号： C23C14/3414 ,  C22C19/03

摘要： Provided are a high purity Ni-V alloy, high purity Ni-V alloy target and high purity Ni-V alloy thin film wherein the purity of the Ni-V alloy excluding Ni, V and gas components is 99.9wt% or higher, and the V content variation among ingots, targets or thin films is within 0.4%. With these high purity Ni-V alloy, high purity Ni-V alloy target and high purity Ni-V alloy thin film having a purity of 99.9wt% or higher, the variation among ingots, targets or thin films is small, the etching property is improved, and isotopic elements such as U and Th that emit alpha particles having an adverse effect on microcircuits in a semiconductor device are reduced rigorously. And further provided is a manufacturing method of such high purity Ni-V alloy capable of effectively reducing the foregoing impurities.

摘要翻译： 本发明提供一种高纯度的Ni-V合金，高纯度的Ni-V合金靶和高纯度的Ni-V合金薄膜worin不含镍，钒和气体成分以外的镍-V合金的纯度为99.9重量％或更高，和 锭，靶或薄膜之间的V含量的变化为0.4％以内。 与合成高纯度的Ni-V合金，高纯度的Ni-V合金靶和具有99.9重量％以上纯度的高纯度的Ni-V合金薄膜，锭，靶或薄膜之间的偏差小，则蚀刻性 提高，并且同位素元素：如U和Th发射α粒子也具有不利的影响上的半导体器件中微电路都是经过严格的减少。 并且进一步提供的是寻求高纯度能够有效地减少上述杂质的Ni-V合金的制造方法。