公开(公告)号：EP2755242A1

公开(公告)日：2014-07-16

申请号：EP12830489.6

申请日：2012-09-05

申请人： Nitto Denko Corporation

发明人： NISHII Hiroto ,  MORITA Shigenori ,  TERAJI Seiki ,  HOSOKAWA Kazuhito ,  MINEMOTO Takashi

IPC分类号： H01L31/04

CPC分类号： H01L31/1864 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.

摘要翻译： 本发明提供一种CIGS膜的制造方法其确保做了CIGS一个更高的转换效率具有薄膜可以在更高的再现即使对于生产大面积的设备的较低的成本来制造。 因此，一个CIGS太阳能电池的制造方法提供了一种用于制造CIGS太阳能电池包括CIGS电影。 所述CIGS膜的制造方法，包括：堆叠包含铟，镓和硒和以该顺序在基底包含铜和硒中的固相的层（B）的层（A）的层叠步骤; 并从该层（B）到加热的层叠结构，包括层（A）和层（B）与层（B）的铜和硒的化合物熔融成液相，由此使铜扩散的加热工序 层（A），以允许晶体生长提供CIGS电影。

公开(公告)号：EP2755242B1

公开(公告)日：2018-06-27

申请号：EP12830489.6

申请日：2012-09-05

申请人： Nitto Denko Corporation

发明人： NISHII Hiroto ,  MORITA Shigenori ,  TERAJI Seiki ,  HOSOKAWA Kazuhito ,  MINEMOTO Takashi

IPC分类号： H01L31/032

CPC分类号： H01L31/1864 ,  H01L31/0322 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.