FILM FORMING METHOD AND FILM FORMING APPARATUS
    1.
    发明公开
    FILM FORMING METHOD AND FILM FORMING APPARATUS 失效
    VERFAHREN UND VORRICHTUNG ZUR HERSTELLUNG EINES FILMES

    公开(公告)号:EP0686708A1

    公开(公告)日:1995-12-13

    申请号:EP94907677.2

    申请日:1994-02-24

    申请人: OHMI, Tadahiro

    IPC分类号: C23C16/50 C23C14/34

    摘要: This invention aims at providing a film forming method and a film forming apparatus which are capable of varying the density and composition of a deposition film in the direction of the thickness thereof, and obtaining a film of a stable and high quality. A film forming apparatus consisting of a sealed container having an inlet port for a gas used to cause a chemical vapor growth and sputter a target material, at least two electrodes provided in the container, means for supporting the target material and a substrate on the first and second electrodes out of these electrodes, and two high-frequency power sources having different frequencies and connected to the first and second electrodes; and a film forming method consisting of introducing a gas into the container, applying high-frequency power of different frequencies to the first and second electrodes to generate plasma, and forming a film while controlling DC potential of the target material, whereby a deposition film containing at least one kind of atom out of the atoms constituting the target material and at least one kind of atom out of the atoms contituting the gas mentioned above is formed on the substrate.

    摘要翻译: 本发明的目的在于提供能够改变沉积膜在其厚度方向上的密度和组成的成膜方法和成膜装置,并获得稳定和高质量的膜。 一种成膜装置,包括具有用于引起化学气相生长并溅射靶材料的气体的入口的密封容器,设置在容器中的至少两个电极,用于将第一和第二载体上的靶材料和基底支撑的装置 和这些电极中的第二电极,以及具有不同频率并连接到第一和第二电极的两个高频电源; 以及一种成膜方法,包括将气体引入容器中,将不同频率的高频电力施加到第一和第二电极以产生等离子体,并且在控制目标材料的DC电位的同时形成膜,由此形成含有 构成靶材料的原子中的至少一种原子和与上述气体相反的原子中的至少一种原子形成在基板上。