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1.发明公开
公开(公告)号：EP3745471A1
公开(公告)日：2020-12-02
申请号：EP19177581.6
申请日：2019-05-31
发明人： EBBECKE, Jens , KREUTER, Philipp , KLEMP, Christoph , BIEBERSDORF, Andreas , PIETZONKA, Ines , SUNDGREN, Petrus
IPC分类号： H01L33/00 , H01L21/268 , H01L21/18
摘要： A method of treating a semiconductor wafer (10) comprising a set of Aluminum Gallium Indium Phosphide light emitting diodes or AlGaInP-LEDs to increase the light generating efficiency of the AlGaInP-LEDs,
wherein each ALGaInP-LED includes a core active layer for light generation sandwiched between two outer layers, the core active layer having a central light generating area (20) and a peripheral edge (22) surrounding the central light generating area,
the method comprising the step of treating the peripheral edge (22) of the core active layer of each AlGaInP-LED with a laser beam (L), thus increasing the minimum band gap in each peripheral edge (22) to such an extent that, during later operation of the AlGaInP-LED, the electron-hole recombination is essentially confined to the central light generating area.-
公开(公告)号：EP3745472A1
公开(公告)日：2020-12-02
申请号：EP19177113.8
申请日：2019-05-28
发明人： KREUTER, Philipp , BIEBERSDORF, Andreas , KLEMP, Christoph , EBBECKE, Jens , PIETZONKA, Ines , SUNDGREN, Petrus
摘要： A method for manufacturing a semiconductor device, particularly an optoelectronic device, proposes to provide a growth substrate (10); to deposit an n-doped first layer (20) and an active region (30) on the n-doped first layer (20); then a second layer (50) is deposited onto the active region (30); the second layer is doped with Mg in the second layer (50); Subsequently to depositing Mg, Zn is deposited in the second layer (50) such that a concentration of Zn in the second layer is decreasing from a first value to a second value in a first area of the second layer adjacent to the active region, said first area in the range of 5 nm to 200 nm, in particularly less than 50nm.
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