公开(公告)号：EP0224314A3

公开(公告)日：1988-09-07

申请号：EP86202091

申请日：1986-11-25

申请人： PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED ,  N.V. PHILIPS' GLOEILAMPENFABRIEKEN

发明人： SMOLLETT, MAX ,  MACDONALD, GEORGE LESLIE

IPC分类号： H01J31/02 ,  H01J1/308 ,  H01J29/41 ,  H01J29/44 ,  H01J31/60 ,  H01J1/30

CPC分类号： H01J31/60 ,  H01J1/308 ,  H01J29/41 ,  H01J29/44

摘要： An electron beam addressed memory (EBAM) compris­ ing an envelope (10) within which are provided a source of an electron beam, a microcapacitor target (18) and means (24) for receiving, amplifying and detecting a secondary electron beam produced in response to scanning the target (18) by the electron beam in the read mode. In previous designs of EBAMs tungsten filaments or despenser cathodes have been used for producing the electron beam but if these are replaced by a cold semiconductor cathode (12) it is possible to obtain an electron beam of small cross-sectional size, having a high current density and can be switched on and off at frequencies up to at least 30MHz. The means for receiving, amplifying and detecting the secondary electrons produced in the reading operation comprises in the embodi­ ment illustrated an annular microchannel plate electron multiplier (24) disposed about, and coplanarly with, the target (18).