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公开(公告)号：EP0432851B1
公开(公告)日：1996-03-13
申请号：EP90203241.6
申请日：1990-12-10
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公开(公告)号：EP0432851A3
公开(公告)日：1992-07-22
申请号：EP90203241.6
申请日：1990-12-10
摘要： A variable bi-phase modulator circuit for microwave signals comprises a quadrature power divider (1) having signal input and output ports (2 and 3) and two control ports (4 and 5), and comprises two variable resistors each having an input port (11). In accordance with the invention each of the two variable resistors comprises first and second microwave field-effect transistors (F1 and F2) the drains of which are coupled together via an intermediate resistor (R). These resistors can be formed using microwave monolithic integrated circuit technology and can have very good impedance characteristics. The input port (11) of the variable resistor comprises a connection to the intermediate resistor (R) and to the drain of the first transistor (F2). Each transistor is connected with zero dc bias between its source and drain and has a channel resistance which changes with change in gate voltage (VG1, VG2). A shunt stub (L1, L2) is connected to the drain of each transistor (F1, F2) to at least partially compensate at the frequency of operation of the transistor for the source to drain capacitance and for shifts in reference plane due to changes in the gate voltage of each transistor.
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3.发明公开Variable bi-phase modulator circuits and variable resistors 失效变量Zweiphasenmodulatorschaltungen undveränderlicheWiderstände。
公开(公告)号：EP0432851A2
公开(公告)日：1991-06-19
申请号：EP90203241.6
申请日：1990-12-10
摘要： A variable bi-phase modulator circuit for microwave signals comprises a quadrature power divider (1) having signal input and output ports (2 and 3) and two control ports (4 and 5), and comprises two variable resistors each having an input port (11). In accordance with the invention each of the two variable resistors comprises first and second microwave field-effect transistors (F1 and F2) the drains of which are coupled together via an intermediate resistor (R). These resistors can be formed using microwave monolithic integrated circuit technology and can have very good impedance characteristics. The input port (11) of the variable resistor comprises a connection to the intermediate resistor (R) and to the drain of the first transistor (F2). Each transistor is connected with zero dc bias between its source and drain and has a channel resistance which changes with change in gate voltage (VG1, VG2). A shunt stub (L1, L2) is connected to the drain of each transistor (F1, F2) to at least partially compensate at the frequency of operation of the transistor for the source to drain capacitance and for shifts in reference plane due to changes in the gate voltage of each transistor.
摘要翻译： 用于微波信号的可变双相位调制器电路包括具有信号输入和输出端口（2和3）和两个控制端口（4和5）的正交功率分配器（1），并且包括两个可变电阻器，每个可变电阻器具有输入端口 11）。 根据本发明，两个可变电阻器中的每一个包括第一和第二微波场效应晶体管（F1和F2），其漏极经由中间电阻器（R）耦合在一起。 这些电阻可以使用微波单片集成电路技术形成，并且可以具有非常好的阻抗特性。 可变电阻器的输入端口（11）包括到中间电阻器（R）和第一晶体管（F2）的漏极的连接。 每个晶体管在其源极和漏极之间连接零直流偏置，并具有随栅极电压（VG1，VG2）的变化而变化的沟道电阻。 分流短截线（L1，L2）连接到每个晶体管（F1，F2）的漏极，以在晶体管的工作频率至少部分地补偿源极到漏极电容以及由于参考平面中的变化引起的参考平面中的偏移 每个晶体管的栅极电压。
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