-
公开(公告)号：EP1335995A1
公开(公告)日：2003-08-20
申请号：EP01980044.0
申请日：2001-11-07
CPC分类号： H01J37/3491 , B22F3/14 , B22F7/06 , B22F2999/00 , C23C14/3414 , B22F3/17 , B22F3/20
摘要： The invention relates to a method for producing an evaporation source for physical vapour deposition. The evaporation source consists of the actual sputter target, which comprises an aluminium component and one or more additional components and of a back plate of a material with greater thermal conductivity than the target. According to the invention, the back plate is compressed from pulverulent starting material, together with the pulverulent components of the sputter targets in superposed pulverulent layers and is subsequently formed.
-
公开(公告)号：EP1335995B1
公开(公告)日：2004-09-29
申请号：EP01980044.0
申请日：2001-11-07
CPC分类号： H01J37/3491 , B22F3/14 , B22F7/06 , B22F2999/00 , C23C14/3414 , B22F3/17 , B22F3/20
摘要： The invention relates to a method for producing an evaporation source for physical vapour deposition. The evaporation source consists of the actual sputter target, which comprises an aluminium component and one or more additional components and of a back plate of a material with greater thermal conductivity than the target. According to the invention, the back plate is compressed from pulverulent starting material, together with the pulverulent components of the sputter targets in superposed pulverulent layers and is subsequently formed.
-
搜索结果
2 条记录 (耗时 0.008 秒)
