摘要:
A light source device (20;40) is provided. The light source device (20;40) comprises a semiconductor light-emitting element (12); and a wavelength conversion member (21;41) for converting a wavelength of a light emitted from the semiconductor light-emitting element (12). The semiconductor light-emitting element (12) has a light-emitting peak wavelength of not less than 380 nanometers and not more than 420 nanometers. The light emitted from the semiconductor light-emitting element (12) has a light energy density of not less than 0.2kW/cm 2 . The wavelength conversion member (21;41) contains at least one fluorescent substance selected from the group consisting of a (Sr 1-x Ba x ) 3 MgSi 2 O 8 :Eu 2+ (0≤x≤1) fluorescent substance, a (Y 1-y Gd y ) 3 (Al 1-z Ga z ) 5 O 12 :Ce 3+ (0≤y 3+ -activated fluorescent substance. The light source device (20;40) has a high output and a high light-emitting efficiency.
摘要:
The present invention aims to provide a Eu-activated phosphor that maintains high wavelength conversion efficiency and suppresses deterioration with time due to vacuum ultraviolet irradiation, as well as a plasma display panel having superior display performance by suppressing sticking image caused by deterioration of the phosphor with time. To this end, the present invention provides a europium-activated phosphor where a divalent europium ratio of each phosphor particle constituting the phosphor is lower at and in a vicinity of a particle surface than for the particle as a whole. With such phosphor particles, it is possible to obtain the Eu-activated phosphor that has high maintaining ratio of emission intensity and high performance in suppressing deterioration with time in comparison with a conventional phosphor.
摘要:
In the present invention, a capacitor element including a valve action metal, an oxide film layer (2) formed on the surface of the valve action metal, and a solid electrolytic layer (3) formed on the oxide film layer (2) is provided with an organic compound having a boiling point of not lower than 150 DEG C and a melting point of not higher than 150 DEG C, and the capacitor element including the organic compound is arranged inside a package (9). The oxide film is repaired with the organic compound as a solvent by an application of a dc voltage.