公开(公告)号：EP4145542A1

公开(公告)日：2023-03-08

申请号：EP21797327.0

申请日：2021-04-15

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： IIJIMA, Hiroaki ,  KISHIMOTO, Yuko ,  HIRADE, Masaya ,  TANAKA, Shinji

IPC分类号： H01L31/10 ,  H01L27/146 ,  H04N5/357 ,  H04N5/369

摘要： An imaging device includes a plurality of pixels. Each of the plurality of pixels includes a first electrode, a second electrode, a photoelectric conversion layer that is located between the first electrode and the second electrode, contains a donor semiconductor material and an acceptor semiconductor material, and generates a pair of an electron and a hole, a first charge blocking layer located between the first electrode and the photoelectric conversion layer, a second charge blocking layer located between the second electrode and the photoelectric conversion layer, and a charge storage region that is electrically connected to the second electrode and stores the hole. The difference between the electron affinity of the acceptor semiconductor material and the electron affinity of the first charge blocking layer is larger than the difference between the ionization potential of the donor semiconductor material and the ionization potential of the second charge blocking layer.