公开(公告)号：EP3944349A1

公开(公告)日：2022-01-26

申请号：EP20773996.2

申请日：2020-02-20

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： YAMADA, Shota ,  HIROSE, Yutaka

IPC分类号： H01L51/42 ,  H01L31/10 ,  H01L27/146 ,  H04N5/369 ,  H04N5/374

摘要： An imaging device according to one aspect of the present disclosure includes: a photoelectric conversion unit including a first electrode, a second electrode, a photoelectric conversion layer that converts incident light into a signal charge, and a blocking layer; and a charge accumulation unit that is coupled to the second electrode, and that accumulates the signal charge. An energy barrier of the blocking layer against migration of a charge having an opposite polarity to a polarity of the signal charge from the second electrode to the photoelectric conversion layer is larger than or equal to 1.8 eV, and an energy barrier of the blocking layer against migration of the charge from the photoelectric conversion layer to the second electrode is smaller than or equal to 1.6 eV.

公开(公告)号：EP4195281A1

公开(公告)日：2023-06-14

申请号：EP21854518.4

申请日：2021-07-05

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： TOMEKAWA ,Yuuko ,  YAMADA, Shota

IPC分类号： H01L27/146 ,  H01L27/144 ,  H04N5/369

摘要： An imaging device includes a first electrode, a second electrode, a photoelectric conversion layer, and a charge storage region. The photoelectric conversion layer is located between the first electrode and the second electrode. The charge storage region is electrically connected to the first electrode. An area of the charge storage region in plan view is smaller than or equal to 0.04 µm 2 .

公开(公告)号：EP3439041B1

公开(公告)日：2020-09-02

申请号：EP18185440.7

申请日：2018-07-25

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： HIRASE, Junji ,  TAKAMI, Yoshinori ,  YAMADA, Shota ,  SATO, Yoshihiro ,  SATOU, Yoshiaki

IPC分类号： H01L27/146

公开(公告)号：EP3439041A2

公开(公告)日：2019-02-06

申请号：EP18185440.7

申请日：2018-07-25

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： HIRASE, Junji ,  TAKAMI, Yoshinori ,  YAMADA, Shota ,  SATO, Yoshihiro ,  SATOU, Yoshiaki

IPC分类号： H01L27/146

摘要： An imaging device includes a semiconductor substrate having a surface, the semiconductor substrate including: a first layer of a first conductivity type; a second layer of a second conductivity type, the second layer being closer to the surface; and a pixel including: a photoelectric converter configured to convert light into charge; a first diffusion region of the first conductivity type, the first diffusion region facing the first layer via the second layer, configured to store at least a part of the charge; and a second diffusion region being a diffusion region closest to the first diffusion region among diffusion regions of the first conductivity type, the diffusion regions facing the first layer via the second layer. A distance between the second diffusion region and the first layer is equal to or less than 1.5 times a distance between the second diffusion region and the first diffusion region.