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8 条记录 (耗时 0.009 秒)

    Wide band gap semiconductor light-emitting devices
    3.
    发明公开
    Wide band gap semiconductor light-emitting devices 失效
    Lichtemittierende Halbleitervorrichtungen mit grossem Bandabstand。

    公开(公告)号：EP0359329A2

    公开(公告)日：1990-03-21

    申请号：EP89202285.6

    申请日：1989-09-11

    申请人： Philips Electronics N.V.

    发明人： Colak, Sel Brian

    IPC分类号： H01L33/00 ,  H01S3/096

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L27/15 ,  H01L33/0004 ,  H01L33/04 ,  H01S5/04 ,  H01S5/347 ,  H01S5/40

    摘要： Wide band gap, single conductivity type semiconductor light-emitting diodes (LED's) (90) feature a bias potential across the device below that required for carrier multiplication by avalanche breakdown, together with separate means for carrier introduction, such as an electron beam or a pn junction diode (91), to achieve light emission. The addition of Fabry-Perot surfaces (154, 155) converts the LED to a semiconductor laser (150). Efficiency enhancing heterostructure, including potential wells (95, 96) and staircases (92-94), may be added to the device. Arrays of such devices (172) on a substrate (171) may be scanned by an electron beam to display video information.

    摘要翻译： 宽带隙，单导电型半导体发光二极管（LED）（90）具有穿过器件的偏置电位，低于雪崩击穿载波倍增所需的偏置电位，以及用于载流子引入的单独装置，例如电子束或 pn结二极管（91），实现发光。 加法布里 - 珀罗表面（154,155）将LED转换成半导体激光器（150）。 可以向装置添加包括势阱（95,96）和楼梯（92-94）在内的效率增强异质结构。 可以通过电子束扫描衬底（171）上的这种器件（172）的阵列以显示视频信息。

    Multimode-laser for an optical information processing system, especially for a neural net
    4.
    发明公开
    Multimode-laser for an optical information processing system, especially for a neural net 失效
    Multimoden-Laserfürein optisches Informationsverarbeitungssystem，insbesonderefürein neuronales Netz。

    公开(公告)号：EP0655672A1

    公开(公告)日：1995-05-31

    申请号：EP94203389.5

    申请日：1994-11-22

    申请人： PHILIPS ELECTRONICS N.V.

    发明人： Liedenbaum, Coen Theodorus Hubertus Franciscus ,  Colak, Sel Brian ,  Schleipen, Johannes Joseph Hubertina Barbara

    IPC分类号： G06E3/00

    CPC分类号： G06E3/001 ,  G06N3/067 ,  H01S5/0608 ,  H01S5/065

    摘要： An optical information processing system functionally comprises coding means to individually code a plurality of optical information carrier waves, and processing means coupled to the coding means and operative to process the plurality of coded information carrier waves. The processing means comprises laser means operative to produce laser light that corresponds to the received information carrier waves through longitudinal laser mode competition upon reception of the code information carrier waves.

    摘要翻译： 光学信息处理系统功能上包括对多个光信息载波进行单独编码的编码装置，以及耦合到编码装置并且可操作以处理多个编码信息载波的处理装置。 处理装置包括激光装置，用于在接收到码信息载波时通过纵向激光模式竞争产生对应于接收的信息载波的激光。

    Wide band gap semiconductor light-emitting devices
    5.
    发明公开
    Wide band gap semiconductor light-emitting devices 失效
    宽带隙半导体发光器件

    公开(公告)号：EP0359329A3

    公开(公告)日：1991-04-03

    申请号：EP89202285.6

    申请日：1989-09-11

    申请人： Philips Electronics N.V.

    发明人： Colak, Sel Brian

    IPC分类号： H01L33/00 ,  H01S3/096

    CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L27/15 ,  H01L33/0004 ,  H01L33/04 ,  H01S5/04 ,  H01S5/347 ,  H01S5/40

    摘要： Wide band gap, single conductivity type semiconductor light-emitting diodes (LED's) (90) feature a bias potential across the device below that required for carrier multiplication by avalanche breakdown, together with separate means for carrier introduction, such as an electron beam or a pn junction diode (91), to achieve light emission. The addition of Fabry-Perot surfaces (154, 155) converts the LED to a semiconductor laser (150). Efficiency enhancing heterostructure, including potential wells (95, 96) and staircases (92-94), may be added to the device. Arrays of such devices (172) on a substrate (171) may be scanned by an electron beam to display video information.

    Electron-beam-pumped semiconductor laser and array
    7.
    发明公开
    Electron-beam-pumped semiconductor laser and array 失效
    Durch Elektronen gepumpter Halbleiterlaser und Vorrichtung。

    公开(公告)号：EP0184250A2

    公开(公告)日：1986-06-11

    申请号：EP85201896.9

    申请日：1985-11-19

    申请人： Philips Electronics N.V.

    发明人： Colak, Sel Brian ,  Fitzpatrick, Brian John

    IPC分类号： H01S3/18 ,  H01S3/0959

    CPC分类号： H01S5/04 ,  H01S5/42

    摘要： An eiectron-beam-pumped semiconductor laser generates a substantially transverse laser amplification (105) in response to a longitudinal electron beam input (104). As a result of a grooved active region configuration, the transverse laser amplification (105) results in a longitudinal laser output (106) in the same direction as that of the original electron beam input (104). This composite transverse- longitudinal configuration results in reduced threshold power density, thus enhancing laser lifetime, while at the same time provides a configuration which is particularly advantageous for use in large-area laser array display screens.

    摘要翻译： 电子束泵浦半导体激光器响应于纵向电子束输入（104）产生基本横向的激光放大（105）。 作为沟槽有源区域配置的结果，横向激光放大（105）导致与原始电子束输入（104）相同方向的纵向激光输出（106）。 该复合横向纵向构造导致阈值功率密度降低，从而提高激光寿命，同时提供对于在大面积激光阵列显示屏中使用特别有利的配置。

    Polychromatic cathode ray tubes
    8.
    发明公开
    Polychromatic cathode ray tubes 失效
    多色阴极射线管

    公开(公告)号：EP0147899A2

    公开(公告)日：1985-07-10

    申请号：EP84201896.2

    申请日：1984-12-18

    申请人： Philips Electronics N.V.

    发明人： Colak, Sel Brian

    IPC分类号： H01J31/20 ,  H04N9/22

    CPC分类号： H01J31/20 ,  H01J29/182 ,  H04N9/22

    摘要： A polychromatic cathode ray tube includes a screen formed by a single layer of crystalline semi-conductor material which luminesces in visible light when excited by an electron beam. The color of luminescence is varied by modulating the heat energy imparted to the layer by the electron beam.

    摘要翻译： 多色阴极射线管包括由单层的晶体半导体材料形成的屏幕，当被电子束激发时，该材料发出可见光。 发光的颜色通过调制电子束赋予层的热能而变化。