公开(公告)号：EP2486586A1

公开(公告)日：2012-08-15

申请号：EP10771245.7

申请日：2010-10-07

申请人： Qualcomm Incorporated

发明人： KIM, Jonghae ,  GU, Shiqun ,  HENDERSON, Brian Matthew ,  TOMS, Thomas R. ,  CHUA-EOAN, Lew G. ,  BAZARJANI, Seyfollah S. ,  NOWAK, Matthew

IPC分类号： H01L21/02 ,  H01L23/522 ,  H01F17/00 ,  H01L27/06 ,  H01L23/48

摘要： A three dimensional on-chip inductor, transformer and radio frequency amplifier are disclosed. The radio frequency amplifier includes a pair of transformers and a transistor. The transformers include at least two inductively coupled inductors. The inductors include a plurality of segments of a first metal layer, a plurality of segments of a second metal layer, a first inductor input, a second inductor input, and a plurality of through silicon vias coupling the plurality of segments of the first metal layer and the plurality of segments of the second metal layer to form a continuous, non-intersecting path between the first inductor input and the second inductor input. The inductors can have a symmetric or asymmetric geometry. The first metal layer can be a metal layer in the back-end-of-line section of the chip. The second metal layer can be located in the redistributed design layer of the chip.

公开(公告)号：EP2486586B1

公开(公告)日：2020-11-18

申请号：EP10771245.7

申请日：2010-10-07

申请人： Qualcomm Incorporated

发明人： KIM, Jonghae ,  GU, Shiqun ,  HENDERSON, Brian Matthew ,  TOMS, Thomas R. ,  CHUA-EOAN, Lew G. ,  BAZARJANI, Seyfollah S. ,  NOWAK, Matthew

IPC分类号： H01L21/02 ,  H01L23/522 ,  H01F17/00 ,  H01L27/06 ,  H01L23/48