公开(公告)号：EP3134962A1

公开(公告)日：2017-03-01

申请号：EP15722380.1

申请日：2015-04-23

申请人： Qualcomm Incorporated

发明人： SAADAT, Seyed Mahmoudreza ,  SHI, Chunlei ,  ZHAN, Chenchang

IPC分类号： H02M3/07

CPC分类号： H02M3/07 ,  H02M2001/0022 ,  H02M2001/0087

摘要： In one embodiment, a circuit comprises a charge pump. A gain control circuit is configured to detect an input voltage and generate a gain control signal to change a gain of the charge pump to maintain the output voltage of the charge pump in a voltage range. A voltage to frequency converter is configured to detect the input voltage and change a frequency of a frequency control signal applied to the charge pump based in the detected input voltage to maintain the frequency in a frequency range so that the output voltage of the charge pump is maintained in the voltage range.

摘要翻译： 在一个实施例中，电路包括电荷泵。 增益控制电路被配置为检测输入电压并产生增益控制信号以改变电荷泵的增益，以将电荷泵的输出电压维持在电压范围内。 电压 - 频率转换器被配置为基于检测到的输入电压来检测输入电压并改变施加到电荷泵的频率控制信号的频率，以将频率保持在频率范围内，使得电荷泵的输出电压为 保持在电压范围内。

公开(公告)号：EP3134971A1

公开(公告)日：2017-03-01

申请号：EP15721938.7

申请日：2015-04-23

申请人： Qualcomm Incorporated

发明人： SAADAT, Seyed Mahmoudreza ,  SHI, Chunlei ,  ZHAN, Chenchang

IPC分类号： H03K17/687

CPC分类号： H03K3/012 ,  H03K17/56 ,  H03K17/6874 ,  H03K2217/0036 ,  H03K2217/0081

摘要： Disclosed is a circuit comprises a first switching transistor (106) and a second switching transistor (108). The first switching transistor and the second switching transistor are coupled in series between an input voltage (V
IN ) and ground and having a common node (Switch Node) there between to provide a switching output. A first switching circuit (120) selectively couples a gate (G
P ) of the first switching transistor to the input voltage and a first mid-level voltage supply (V
LS ). A second switching circuit (118) selectively couples a gate (G
N ) of the second switching transistor to a second mid-level voltage supply (V
HS ) and ground. A charge-recycling circuit is thereby connected to the gate of the first switching transistor, the gate of the second switching transistor, the first mid-level voltage supply, and the second mid-level voltage supply to selectively recycle charge between the first mid-level voltage supply and the second mid-level voltage supply.

摘要翻译： 在一个实施例中，电路包括第一开关晶体管和第二开关晶体管。 第一开关晶体管和第二开关晶体管串联耦合在输入电压和地之间并且在它们之间具有公共节点以提供开关输出。 第一开关电路将第一开关晶体管的栅极选择性地耦合到输入电压和第一中间电平电压。 第二开关电路将第二开关晶体管的栅极选择性地耦合到第二中间电平电压源并接地。 电荷回收电路耦合到第一开关晶体管的栅极，第二开关晶体管的栅极，第一中间电平电压供应和第二中间电平电压，以选择性地在第一中间电平 电压供应和第二中间电压供应。

公开(公告)号：EP3134793A1

公开(公告)日：2017-03-01

申请号：EP15722379.3

申请日：2015-04-23

申请人： Qualcomm Incorporated

发明人： SAADAT, Seyed Mahmoudreza ,  SHI, Chunlei ,  ZHAN, Chenchang

IPC分类号： G05F1/575

CPC分类号： H02M3/07 ,  G05F1/575 ,  G05F1/577

摘要： In one embodiment, a circuit comprises a first load circuit coupled to a first input voltage. A current sinking circuit is coupled to an output of the first load circuit. A second load circuit is coupled to ground. A current sourcing circuit is coupled between a second input voltage and an output of the second load circuit. A charge-recycling circuit is coupled between the output of the first load circuit and the output of the second load circuit to provide current from the current sinking circuit to the output of the current sourcing circuit to reduce current through the current sourcing circuit. The charge-recycling circuit can be a charge pump.

摘要翻译： 在一个实施例中，电路包括耦合到第一输入电压的第一负载电路。 电流吸收电路耦合到第一负载电路的输出端。 第二负载电路耦合到地。 电流源电路耦合在第二输入电压和第二负载电路的输出之间。 电荷回收电路耦合在第一负载电路的输出和第二负载电路的输出之间，以提供从电流吸收电路到电流源电路的输出的电流，以减少通过电流源电路的电流。 充电回收电路可以是电荷泵。