公开(公告)号：EP2481080A1

公开(公告)日：2012-08-01

申请号：EP10721930.5

申请日：2010-02-15

申请人： RENA GmbH

发明人： DELAHAYE, Franck ,  SAULE, Werner ,  WEFRINGHAUS, Eckard ,  QUEISSER, Steffen

IPC分类号： H01L21/00 ,  H01L31/18

CPC分类号： H01L21/67086 ,  H01L21/67069 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： The invention relates to a method for at least partially etching back a semiconductor layer (1) of a substrate (3), wherein the substrate (3) is arranged at least partially in an etching solution (5) and wherein areas of the semiconductor layer (3) located outside the etching solution (5) are at least partially removed by means of reactive vapors (11) originating from the etching solution (5), and a device for performing the method.

公开(公告)号：EP2460176A1

公开(公告)日：2012-06-06

申请号：EP09799542.7

申请日：2009-12-18

申请人： RENA GmbH

发明人： SANDER, Bernd-Uwe ,  QUEISSER, Steffen ,  DELAHAYE, Franck

IPC分类号： H01L21/00 ,  H01L21/306 ,  H01L21/311

CPC分类号： H01L21/67086 ,  H01L21/31111

摘要： The present invention relates to a method for the exclusively one-sided wet chemical removal of passivating and/or dielectric oxide layers present on flat substrates, such as in particular silicon wafers, by means of one-sided etching of the underside of a substrate transported horizontally through a tank filled with an etching liquid. When said method is used, there is no need for any protection in the form of a coating or mechanical aid for the face of the substrate that is not to be treated. According to the invention, the etching liquid contains water, hydrofluoric acid and at least one further component selected from the group consisting of sulphuric and phosphoric acid and the alkali, ammonium and organoammonium acid salts and salts thereof, hexafluorosilicic acid, and silicon tetrafluoride.