公开(公告)号：EP2131492B1

公开(公告)日：2012-07-18

申请号：EP07850860.3

申请日：2007-12-19

申请人： Renesas Electronics Corporation

发明人： OHNISHI, Masami ,  TANAKA, Satoshi ,  TANAKA, Ryouichi

IPC分类号： H03F3/195 ,  H03F3/16 ,  H03F3/60 ,  H03F3/24 ,  H03F1/02 ,  H03F3/68 ,  H03F1/56

CPC分类号： H03F3/195 ,  H03F1/0272 ,  H03F1/565 ,  H03F3/245 ,  H03F3/601 ,  H03F3/602 ,  H03F3/68 ,  H03F3/72 ,  H03F2200/108 ,  H03F2200/111 ,  H03F2200/18 ,  H03F2200/207 ,  H03F2200/255 ,  H03F2200/294 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/411 ,  H03F2200/423 ,  H03F2200/451 ,  H03F2200/456 ,  H03F2200/462 ,  H03F2200/465 ,  H03F2200/537 ,  H03F2200/541 ,  H03F2203/7206 ,  H03F2203/7209

摘要： An RF amplification device includes: amplification elements (Q11, Q12) for amplifying a radio frequency input signal (Pin_LB) of radio communication; and transmission line transformers (TLT11, 12) connected to the input electrode or the output electrode of the amplification elements. The TLT11, 12 include a main line (Lout) arranged between the input and the output and a sub line (Lin) arranged between the input or the output and an AC contact point and connected to the main line (Lout). When an operation voltage Vdd different from a grounding voltage level (GND) is applied to the AC contact point, the operation voltage is supplied to the output electrodes of the amplification elements (Q11, Q12) via the sub line (Lin) from the AC contact point. This eliminates increase of a module height of an RF module when realizing a high-performance load circuit in the RF amplification device and eliminates increase of the area occupied by the load circuit of the high-frequency amplifier formed by a semiconductor chip or a multi-layer line circuit substrate.