VERFAHREN ZUR HERSTELLUNG EINER SOLARZELLE
    2.
    发明公开

    公开(公告)号:EP2556545A2

    公开(公告)日:2013-02-13

    申请号:EP11703234.2

    申请日:2011-02-16

    申请人: Robert Bosch GmbH

    发明人: BOESCKE, Tim

    IPC分类号: H01L31/18

    摘要: The invention relates to a method for producing a solar cell from a silicon substrate, which has a first main surface serving as a light incidence side during use and a second main surface serving as a rear side, having a passivation layer on the second main surface, comprising the steps of: applying an oxide-containing layer to the second main surface of the silicon substrate; and heating the silicon substrate to a temperature of at least 800°C to compact the oxide-containing layer and to oxidize the interface between the oxide-containing layer and the second main surface of the silicon substrate to form a thermal oxide, wherein an oxygen source delivers oxygen for the oxidation.

    摘要翻译: 本发明涉及一种由硅基板制造太阳能电池的方法,其具有在使用期间用作光入射侧的第一主表面和用作后侧的第二主表面,在第二主表面上具有钝化层 包括以下步骤:将含氧化物层施加到硅衬底的第二主表面; 和将所述硅衬底加热到​​至少800℃的温度以压缩所述含氧化物层并氧化所述含氧化物层和所述硅衬底的所述第二主表面之间的界面以形成热氧化物,其中氧气 源为氧化提供氧气。

    VERFAHREN ZUR HERSTELLUNG EINER SOLARZELLE
    3.
    发明公开

    公开(公告)号:EP2695206A1

    公开(公告)日:2014-02-12

    申请号:EP12707060.5

    申请日:2012-02-23

    申请人: Robert Bosch GmbH

    发明人: BOESCKE, Tim

    IPC分类号: H01L31/18 H01L31/061

    摘要: A method for producing a solar cell comprising a substrate (1) composed of crystalline silicon is described, wherein, in a surface (1a) of the Si substrate (1), a locally defined n-doped emitter region is produced by whole-area cold coating of the surface (1a) with a P-containing coating (3), followed by a local laser beam (L) doping-in of P atoms from the P-containing coating (3), and subsequent thermal drive-in of the P atoms, proceeding from the doping-in region.

    摘要翻译: 描述了一种用于制造太阳能电池的方法,该太阳能电池包括由晶体硅构成的衬底(1),其中,在Si衬底(1)的表面(1a)中,局部限定的n掺杂发射极区域由整个区域 用含P的涂层(3)对表面(1a)进行冷涂覆,随后用来自含P涂层(3)的P原子掺杂的局部激光束(L),以及随后的热驱入 P原子从掺杂区域开始。