公开(公告)号：EP2190010A2

公开(公告)日：2010-05-26

申请号：EP10155844.3

申请日：2003-08-11

申请人： S.O.I. Tec Silicon on Insulator Technologies

发明人： Ghyselen, Bruno ,  Aulnette, Cécile ,  Osternaud, Bénédite

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  H01L21/02238 ,  H01L21/02255 ,  H01L22/20

摘要： The invention relates to a method of preparing a thin layer of semiconductor material, the method including a step (1050') of correcting the thickness of the layer, said step of correcting thickness of the layer itself comprising the following operations: acquiring a measured thickness profile of the layer; deducing thickness correction specifications from the measured thickness profile; and correcting the thickness of the layer in accordance with said specifications; the method being characterized in that thickness correction implements a technique which simultaneously treats the entire surface of the layer, while locally and selectively adapt layer thickness in different regions of the layer surface. The invention also relates to an associated machine.

摘要翻译： 本发明涉及一种制备半导体材料薄层的方法，该方法包括校正层的厚度的步骤（1050'），该层本身的厚度校正步骤包括以下操作：获取测量的厚度 层的轮廓; 从测量的厚度剖面推导厚度校正规范; 并根据所述规格校正层的厚度; 该方法的特征在于，厚度校正实现了同时处理层的整个表面，同时局部且选择性地适应层表面的不同区域中的层厚度的技术。 本发明还涉及一种相关联的机器。