公开(公告)号：EP1482548A1

公开(公告)日：2004-12-01

申请号：EP03291252.9

申请日：2003-05-26

申请人： S.O.I. Tec Silicon on Insulator Technologies S.A.

发明人： Maurice, Thibaut ,  Cayrefourcq, Ian ,  Fournel, Franck

IPC分类号： H01L21/762 ,  H01L21/20

CPC分类号： H01L21/76254

摘要： The present invention relates to a method of manufacturing a wafer in which a heterogeneous material compound is split at a pre-determined splitting area of the compound, and the compound is subject to a thermal treatment. It is the object of the present invention to provide an easy and effective method of splitting a heterogeneous material compound with a reduced risk of an undefined breaking of the compound. The object is solved by a method of the above-mentioned type characterised in that the thermal treatment comprises: an annealing of the compound which is stopped before a splitting of the compound; and an irradiation of the compound with photons in order to obtain a splitting of the compound at the pre-determined splitting area.

摘要翻译： 该方法包括退火异质材料化合物，其中退火步骤在化合物分裂之前停止。 退火步骤以高达99％的化合物分裂的热分裂能量的能量进行。 用光子照射材料化合物以在预定的分裂区域（5）处分裂化合物。