公开(公告)号：EP1861873A1

公开(公告)日：2007-12-05

申请号：EP06725289.0

申请日：2006-03-23

申请人： S.O.I.TEC. Silicon on Insulator Technologies S.A.

发明人： LETERTRE, Fabrice ,  GHYSELEN, Bruno ,  CAYREFOURCQ, Ian

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/76251

摘要： The invention relates to a method of producing a structure comprising at least one semiconductor material for use in microelectronics, optoelectronics, optics, etc. The inventive method comprises the following steps consisting in: equipping a support (10) which is made from a first material with a thin monocrystalline layer (22) of a second material which is different from the first, said layer being transferred to the support; and performing a pre-determined heat treatment such as at least to reinforce the bonding interface (12) between the thin layer and the support. The method is characterised in that the thickness (e1) of the thin layer is selected as a function of the difference between the thermal expansion coefficients of the first and second materials and as a function of the parameters of said pre-determined heat treatment, such that the stresses exerted by said treatment on the support/transferred thin layer assembly leave same intact. The invention is also characterised in that it comprises an additional step in which an additional thickness (22') of the second material in the monocrystalline state is deposited on the thin layer. The invention is suitable for the production of hetero-substrates comprising a thick useful layer.

公开(公告)号：EP1979933A1

公开(公告)日：2008-10-15

申请号：EP06841567.8

申请日：2006-12-21

申请人： S.O.I.TEC Silicon on Insulator Technologies S.A.

发明人： BOUSSAGOL, Alice ,  FAURE, Bruce ,  GHYSELEN, Bruno

IPC分类号： H01L21/20 ,  C30B33/00

CPC分类号： H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  H01L21/2007

摘要： A method for the manufacture of substrates, in particular for the optical,electronic or optoelectronic areas, and a substrate created in accordance with the said method This present invention concerns a method for the manufacture of substrates, in particular for the optical, electronic or optoelectronic areas, that includes at least the following stages for the transfer of a seed layer (5) onto a receiving support (3), and the epitaxy of a usable layer (6) onto the seed layer (5), the said method being notable in that the thermal coefficient of expansion of the receiving support (3) is identical to or slightly greater than the thermal coefficient of expansion of the usable layer (6), and the 15 thermal coefficient of expansion of the seed layer (5) is more-or-less equal to the thermal coefficient of expansion of the receiving support (3).