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1.发明公开Method for producing light-emitting diode 失效Verfahren zum Herstellen einer lichtemittierenden Diode。
公开(公告)号：EP0685892A2
公开(公告)日：1995-12-06
申请号：EP95303696.9
申请日：1995-05-31
IPC分类号： H01L33/00 , H01L21/208
CPC分类号： H01L33/305 , H01L33/0062
摘要： A method for producing a light-emitting diode provided with a pn junction of GaP containing nitrogen on an n-type GaP substrate, includes the steps of: forming an n-type GaP layer on the n-type GaP substrate by epitaxial growth by bringing the n-type GaP substrate into contact with an oversaturated melted Ga; forming an n-type GaP:N layer having a low n-type carrier concentration on the n-type GaP layer by epitaxial growth by bringing the melted Ga into contact with NH 3 gas; and forming a p-type GaP:N layer having a carrier concentration almost equal to a carrier concentration of the n-type GaP:N layer on the n-type GaP:N layer.
摘要翻译： 一种制造在n型GaP衬底上具有含有氮的GaP的pn结的发光二极管的方法包括以下步骤：通过外延生长在n型GaP衬底上形成n型GaP层， n型GaP衬底与过饱和熔融Ga接触; 通过使熔融的Ga与NH 3气体接触，通过外延生长在n型GaP层上形成具有低n型载流子浓度的n型GaP：N层; 并形成在n型GaP：N层上具有几乎等于n型GaP：N层的载流子浓度的载流子浓度的p型GaP：N层。
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公开(公告)号：EP0685892A3
公开(公告)日：1998-04-01
申请号：EP95303696.9
申请日：1995-05-31
IPC分类号： H01L33/00 , H01L21/208
CPC分类号： H01L33/305 , H01L33/0062
摘要： A method for producing a light-emitting diode provided with a pn junction of GaP containing nitrogen on an n-type GaP substrate, includes the steps of: forming an n-type GaP layer on the n-type GaP substrate by epitaxial growth by bringing the n-type GaP substrate into contact with an oversaturated melted Ga; forming an n-type GaP:N layer having a low n-type carrier concentration on the n-type GaP layer by epitaxial growth by bringing the melted Ga into contact with NH 3 gas; and forming a p-type GaP:N layer having a carrier concentration almost equal to a carrier concentration of the n-type GaP:N layer on the n-type GaP:N layer.
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公开(公告)号：EP0685892B1
公开(公告)日：2002-02-06
申请号：EP95303696.9
申请日：1995-05-31
IPC分类号： H01L33/00 , H01L21/208
CPC分类号： H01L33/305 , H01L33/0062
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