公开(公告)号：EP1156531A1

公开(公告)日：2001-11-21

申请号：EP00977956.2

申请日：2000-11-27

申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED ,  S.O.I.Tec Silicon on Insulator Technologies

发明人： Kuwabara, Susumu Isobe R & D Center ,  Mitani, Kiyoshi Isobe R & D Center ,  Tate, Naoto Isobe R & D Center ,  Nakano, Masatake Isobe R & D Center ,  Barge, Thierry S.O.I.TEC Silicon on Insulator Tech ,  Maleville, Christophe SOITEC Silicon on Ins. Tech

IPC分类号： H01L27/12

CPC分类号： H01L21/02032 ,  H01L21/76254 ,  H01L22/34 ,  Y10S438/906 ,  Y10S438/974 ,  Y10S438/977

摘要： In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.

摘要翻译： 在通过离子注入和分层方法回收在接合晶片的生产中作为副产物生产的分层晶片的方法中，至少去除分层晶片的倒角部分上的离子注入层，然后将表面 晶圆被抛光。 具体而言，通过倒角对剥离后的晶片的至少倒角部进行蚀刻处理和/或处理，然后对晶片的表面进行研磨。 或者，对分层晶片进行热处理，然后进行抛光。 提供了一种用于回收分层晶片的方法，其提供了高质量的再生晶片，即使当其以良好的成品进行热处理时也不产生颗粒，以及这种再生晶片。