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公开(公告)号:EP3960369A1
公开(公告)日:2022-03-02
申请号:EP21192605.0
申请日:2021-08-23
发明人: YUN, Jong Wook , HEO, Hyeyoung , AHN, Jaein , KIM, Kyung Hwan
IPC分类号: B24B37/04 , B24B37/24 , H01L21/321
摘要: The present invention provides a polishing pad, a process for preparing the same, and a process for preparing a semiconductor device using the same. In the polishing pad, the surface zeta potential and its ratio of the polishing surface are controlled to specific ranges according to the type of polishing slurry, whereby it is possible to improve the characteristics of scratches and surface defects appearing on the surface of the semiconductor substrate and to further enhance the polishing rate.