公开(公告)号：EP1632593A4

公开(公告)日：2010-09-15

申请号：EP04729272

申请日：2004-04-23

申请人： STELLA CHEMIFA CORP ,  FUKUDA CRYSTAL LAB LTD

发明人： FUKUDA TSUGUO ,  KIKUYAMA HIROHISA ,  SATONAGA TOMOHIKO

IPC分类号： C30B29/12 ,  C01B9/08 ,  C30B15/00 ,  C30B15/08

CPC分类号： C30B15/08 ,  C01B9/08 ,  C30B29/12 ,  Y10T117/10

公开(公告)号：EP1666644A4

公开(公告)日：2009-05-20

申请号：EP04770823

申请日：2004-07-20

申请人： STELLA CHEMIFA KK ,  FUKUDA CRYSTAL LAB LTD

发明人： SATONAGA TOMOHIKO ,  KIKUYAMA HIROHISA ,  FUKUDA TSUGUO

IPC分类号： C30B29/12 ,  C30B15/08 ,  C30B15/10

CPC分类号： C30B29/12 ,  C30B15/08 ,  C30B15/10

摘要： A method for producing a crystal of a fluoride wherein a single crystal of a fluoride is produced by pulling down the single crystal from a crucible for holding a melt of a raw material for the crystal having a hole in the bottom portion thereof, characterized in that the plane at the exit portion of the above hole has a desired shape of a plane. A crystal of a fluoride having a shape according to the use of the fluoride can be grown by using carbon, platinum or iridium being a material capable of corresponding to a fluoride and designing the shape of a crucible taking the wettability of the fluoride with each of the materials into consideration. The above method can be employed for producing a crystal of a fluoride having an arbitrary shape.

公开(公告)号：EP1840948A4

公开(公告)日：2009-01-14

申请号：EP05816466

申请日：2005-12-19

申请人： STELLA CHEMIFA CORP

发明人： KIKUYAMA HIROHISA ,  WAKI MASAHIDE ,  ITO KANENORI ,  KUJIME TAKANOBU ,  NII KEIICHI ,  HASEBE RUI ,  TSURUMARU HITOSHI ,  NAKASHIMA HIDEKI

IPC分类号： H01L21/3213 ,  C23F1/26

CPC分类号： H01L21/32134 ,  C23F1/26 ,  H01L27/124

摘要： A fine treatment agent for fine treatment of a film stack including a tungsten film and a silicon oxide film is characterized in that it includes at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, the fine treatment agent for performing fine treatment to the film stack of the tungsten film and the silicon oxide film by controlling an etch rate, and a fine treatment method using such fine treatment agent are provided.

公开(公告)号：EP1593692A4

公开(公告)日：2008-02-27

申请号：EP04731497

申请日：2004-05-06

申请人： STELLA CHEMIFA CORP

发明人： KITANO HISAO ,  SHIMIZU HIROSHI ,  NOZAKI MASAKATSU ,  TANIMOTO FUMIO ,  KIKUYAMA HIROHISA ,  WAKI MASAHIDE ,  ITO KANENORI ,  HASHIGUCHI SHINJI

IPC分类号： C07H5/06 ,  C08B37/08

CPC分类号： C07H5/06 ,  A23K10/20 ,  A23K20/163 ,  A23K20/24 ,  A23K50/80 ,  C08B37/003

摘要： A chitin oligomer composition and/or chitosan oligomer composition in which the content of oligomers having a degree of polymerization of 3 to 10 is 60% or higher; and a process for producing the oligomer composition(s). The process comprises mixing hydrofluoric acid, another hydrohalogenic acid, or an acid of either with a chitin-based and/or chitosan-based material.

摘要翻译： 其中聚合度为3至10的低聚物的含量为60％或更高的甲壳素低聚物组合物和/或壳聚糖寡聚物组合物; 和生产低聚物组合物的方法。 该方法包括将氢氟酸，另一种氢卤酸或任一种的酸与基于几丁质和/或壳聚糖的材料混合。

公开(公告)号：EP1780778A4

公开(公告)日：2009-06-03

申请号：EP05757755

申请日：2005-07-11

申请人： UNIV TOHOKU ,  STELLA CHEMIFA CORP

发明人： OHMI TADAHIRO ,  TERAMOTO AKINOBU ,  KIKUYAMA HIROHISA ,  NII KEIICHI ,  YAMAMOTO MASASHI

IPC分类号： H01L21/306

CPC分类号： H01L21/02063

摘要： Disclosed is a process liquid which causes only little dissolution of atoms from a semiconductor surface and enables to form a clean and flat semiconductor surface. Also disclosed are a processing method and an apparatus for manufacturing a semiconductor. Specifically disclosed is a process liquid which causes only little dissolution of atoms from a semiconductor surface by using an aqueous solution containing at least one alcohol or ketone, thereby realizing a clean and flat surface.

公开(公告)号：EP1734005A4

公开(公告)日：2008-01-23

申请号：EP05720635

申请日：2005-03-11

申请人： STELLA CHEMIFA CORP

发明人： KIKUYAMA HIROHISA ,  WAKI MASAHIDE ,  HASHIGUCHI SHINJI ,  AOKI KENJI

IPC分类号： C01G35/00 ,  C01G33/00

CPC分类号： C01G33/00 ,  C01G35/00 ,  C01P2004/03 ,  C01P2004/10

摘要： A method for preparing tantalum oxide and/or niobium oxide, characterized in that it comprises adding a basic aqueous solution to an aqueous solution of tantalum fluoride salt and/or niobium fluoride salt, to form tantalum hydroxide and/or niobium hydroxide, and then firing said tantalum hydroxide and/or niobium hydroxide. The above method allows the preparation of the tantalum oxide and/or niobium oxide in the state of a needle crystal or columnar crystal, not of a spherical crystal or an assemblage form.