公开(公告)号：EP2117038B1

公开(公告)日：2018-02-28

申请号：EP09159574.4

申请日：2009-05-06

申请人： SUMCO CORPORATION

发明人： Shiota, Takaaki, Sumco Corporation ,  Nakayama, Takashi, Sumco Corporation ,  Kabasawa, Tomoyuki,, Sumco Corporation

IPC分类号： H01L21/02 ,  H01L21/322

CPC分类号： H01L21/3225 ,  H01L21/02024

摘要： In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 µm and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5x10 7 precipitates/cm 3 .

公开(公告)号：EP2117038A3

公开(公告)日：2010-01-13

申请号：EP09159574.4

申请日：2009-05-06

申请人： SUMCO CORPORATION

发明人： Shiota, Takaaki, Sumco Corporation ,  Nakayama, Takashi, Sumco Corporation ,  Kabasawa, Tomoyuki,, Sumco Corporation

IPC分类号： H01L21/322 ,  H01L21/306

CPC分类号： H01L21/3225 ,  H01L21/02024

摘要： In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 µm and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5x10 7 precipitates/cm 3 .

公开(公告)号：EP2117038A2

公开(公告)日：2009-11-11

申请号：EP09159574.4

申请日：2009-05-06

申请人： SUMCO CORPORATION

发明人： Shiota, Takaaki, Sumco Corporation ,  Nakayama, Takashi, Sumco Corporation ,  Kabasawa, Tomoyuki,, Sumco Corporation

IPC分类号： H01L21/322 ,  H01L21/306

CPC分类号： H01L21/3225 ,  H01L21/02024

摘要： In a silicon wafer having an oxygen precipitate layer, a depth of DZ layer ranging from a wafer surface to an oxygen precipitate layer is 2 to 10 µm and an oxygen precipitate concentration of the oxygen precipitate layer is not less than 5x10 7 precipitates/cm 3 .

摘要翻译： 在具有氧沉淀层的硅晶片中，从晶片表面到氧沉淀层的DZ层的深度为2〜10μm，氧沉淀层的氧析出物浓度为5×10 7个/ cm 3以上 。