公开(公告)号：EP4261893A1

公开(公告)日：2023-10-18

申请号：EP23155297.7

申请日：2023-02-07

申请人： Samsung Electronics Co., Ltd.

发明人： BAEK, Bong Kwan ,  LIM, Jun Hyuk ,  CHUN, Jung Hwan ,  HAN, Kyu-Hee ,  BAEK, Jong Min ,  RYU, Koung Min ,  SHIN, Jung Hoo ,  JANG, Sang Shin

IPC分类号： H01L29/06 ,  H01L21/285 ,  H01L21/768 ,  H01L21/8234 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L21/336 ,  H01L29/775 ,  H01L29/78 ,  B82Y10/00

摘要： Semiconductor devices with improved performance and reliability and methods for forming the same are provided. The semiconductor devices include an active pattern (AP1) extending in a first direction (X), gate structures (GS) spaced apart from each other in the first direction on the active pattern (AP1), a source/drain pattern (150) on the active pattern (AP1), a source/drain contact (170) on the source/drain pattern (150), and a contact liner (175) extending along a sidewall (170_SW) of the source/drain contact (170). A carbon concentration of the contact liner (175) at a first point (PS1) of the contact liner (175) is different from a carbon concentration of the contact liner (175) at a second point (PS2) of the contact liner (175), and the first point (PS1) is at a first height from an upper surface (AP1_US) of the active pattern (AP1), the second point (PS2) is at a second height from the upper surface (AP1_US) of the active pattern (AP1), and the first height is smaller than the second height.