-
1.发明授权Film bulk acoustic resonator having supports and manufacturing method therefor 有权相同的声Filmresonator与支持以及制备方法
公开(公告)号：EP1482638B1
公开(公告)日：2016-01-13
申请号：EP04252855.4
申请日：2004-05-17
发明人： Song, II-jong , Song, In-sang , Kim, Duck-hwan , Park, Yun-kwon , Ha, yeoung-ju 507-1401 Samsung 5th Apartment
IPC分类号： H03H3/02
CPC分类号： H03H9/172 , H03H3/02 , H03H9/0514 , H03H9/0547 , Y10T29/42
摘要： A film bulk acoustic resonator (FBAR) has a support structure, a piezoelectric resonator, and a signal line that is electrically connected, e.g., through a via, to the piezoelectric resonator, all on a semiconductor substrate. Support(s) and/or the via mount the piezoelectric resonator at a predetermined distance from the semiconductor substrate, allowing an ideal shape of the resonator to be realized. The signal line may include a patterned inductor. A capacitor can be formed between the via and the signal line. The resonance characteristics can be enhanced since the substrate loss caused by the driving of the resonator can be prevented due to an air gap formed by the predetermined distance. The resonance frequency can be adjusted by altering the pattern of the inductor, the capacitance of the capacitor and/or the thickness of the piezoelectric layer, also allowing Impedance matching to be readily realized.
-
2.发明公开Film bulk acoustic resonator having supports and manufacturing method therefor 有权相同的声Filmresonator与支持以及制备方法
公开(公告)号：EP1482638A2
公开(公告)日：2004-12-01
申请号：EP04252855.4
申请日：2004-05-17
发明人： Song, II-jong , Song, In-sang , Kim, Duck-hwan , Park, Yun-kwon , Ha, yeoung-ju 507-1401 Samsung 5th Apartment
IPC分类号： H03H3/02
CPC分类号： H03H9/172 , H03H3/02 , H03H9/0514 , H03H9/0547 , Y10T29/42
摘要： A film bulk acoustic resonator (FBAR) has a support structure, a piezoelectric resonator, and a signal line that is electrically connected, e.g., through a via, to the piezoelectric resonator, all on a semiconductor substrate. Support(s) and/or the via mount the piezoelectric resonator at a predetermined distance from the semiconductor substrate, allowing an ideal shape of the resonator to be realized. The signal line may include a patterned inductor. A capacitor can be formed between the via and the signal line. The resonance characteristics can be enhanced since the substrate loss caused by the driving of the resonator can be prevented due to an air gap formed by the predetermined distance. The resonance frequency can be adjusted by altering the pattern of the inductor, the capacitance of the capacitor and/or the thickness of the piezoelectric layer, also allowing Impedance matching to be readily realized.
-
搜索结果
2 条记录 (耗时 0.01 秒)
