公开(公告)号：EP4394863A1

公开(公告)日：2024-07-03

申请号：EP23213311.6

申请日：2023-11-30

申请人： Samsung Electronics Co., Ltd.

发明人： KIM, Bongkeun ,  NOH, Myungsoo ,  CHOI, Dawoon

IPC分类号： H01L23/48 ,  H01L21/8234 ,  H01L23/528 ,  H01L23/535 ,  H01L29/786 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L23/535 ,  H01L23/5286 ,  H01L21/7682 ,  H01L21/76895 ,  H01L29/78696 ,  H01L21/823475 ,  H01L23/485 ,  H01L21/76898 ,  H01L29/42392

摘要： An integrated circuit device (100) includes: a substrate (102) having a backside surface (102B); a pair of fin-type active regions (F1) protruding from the substrate (102) and defining a trench region (T1) in the substrate (102); a pair of source/drain regions (130) disposed, one-by-one, on the pair of fin-type active regions (F1), respectively; a device isolation film (112) covering a sidewall of each of the pair of fin-type active regions (F1) and disposed in the trench region (T1); a via power rail (VPR) disposed between the pair of fin-type active regions (F1) and between the pair of source/drain regions (130), wherein the via power rail (VPR) passes through the device isolation film (112) in a vertical direction; a backside power rail (BPW) passing through the substrate (102) in the vertical direction and disposed at a position overlapping the via power rail (VPR), wherein the backside power rail (BPW) is connected to the via power rail (VPR); and an air spacer (AG1) disposed between the substrate (102) and the backside power rail (BPW).