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公开(公告)号：EP4235800A1
公开(公告)日：2023-08-30
申请号：EP22208495.6
申请日：2022-11-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： KIM, Minho , KIM, Kyungsoo
Abstract: A storage device includes a first semiconductor structure (110) having a first cell area (140), with memory cells disposed on a first semiconductor substrate, and a first metal pad (113) disposed above the first cell area (140). A second semiconductor structure (120) has a peripheral circuit area (150) on a second semiconductor substrate (121) and on which peripheral circuits are disposed, a second cell area (160) including a plurality of second memory cells, and a second metal pad (123) bonded to the first metal pad (113). A third semiconductor structure (130) includes a memory controller (170) disposed on a third semiconductor substrate (131) and connected to a third metal pad (180) through a connection via penetrating through the third semiconductor substrate (131). A connection structure (125) penetrates through the second semiconductor substrate (121) and connects the memory controller (170) to the second semiconductor structure (120). The memory controller (170) controls the first and second cell areas (140, 160) based on a signal applied from a host through the third metal pad (180).
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公开(公告)号：EP4181005A1
公开(公告)日：2023-05-17
申请号：EP22202422.6
申请日：2022-10-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： KIM, Minho , CHU, Younsung
Abstract: Storage systems including a host device, a switch device, and storage devices connected to the host device through the switch device are described. Moreover, techniques for operating a host device, a switch device, and/or one or more storage devices are also described. One or more aspects of the present disclosure may provide for improved storage devices and systems via implementation of blockchain networks. In some cases, a storage device itself may be a node of a blockchain network, or a system including a storage device may be a node of a blockchain network. One or more aspects of the present disclosure provide for attestation of firmware (e.g., qualification verification to identify whether the firmware is operating normally) performed using the blockchain. Further, one or more aspects of the present disclosure describe techniques for performing device authentication between devices, for performing qualification verification for firmware, for performing firmware updates, etc.
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公开(公告)号：EP3895382A1
公开(公告)日：2021-10-20
申请号：EP20738561.8
申请日：2020-01-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： CHUNG, Jinjoo , KIM, Minho , PARK, Sunho , KIM, Namhyun , LEE, Joonyoung
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公开(公告)号：EP4089521A1
公开(公告)日：2022-11-16
申请号：EP21753117.7
申请日：2021-01-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： JANG, Jaechan , JANG, Jongwoon , KIM, Misu , KIM, Minho , PARK, Bongseok
Abstract: Disclosed in various embodiments of the present disclosure are an electronic device including a flexible display (or a foldable display) and an operating method therefor. The electronic device according to various embodiments comprises a camera device, a first display, a second display, and a processor, wherein the processor may be configured to: identify the state of the electronic device on the basis of execution of the camera device; identify an operation mode of the camera device and a display operating in response to the execution of the camera device, on the basis of the state of the electronic device; update settings of the camera device at least on the basis of the operation mode of the camera device and the identified display; and display a preview obtained from the camera device through the identified display, on the basis of the updated settings. Various embodiments are possible.
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公开(公告)号：EP3829173A1
公开(公告)日：2021-06-02
申请号：EP20158637.7
申请日：2020-02-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： KIM, Minho , KANG, Wooseok , NA, Sangkwon
IPC: H04N19/132 , H04N19/154 , H04N19/172 , H04N19/164 , H04N19/115
Abstract: Disclosed is an electronic apparatus. The electronic apparatus includes a processor configured to downscale an image using a trained first artificial intelligence (AI) model and to encode a downscaled image, and the processor is configured to control downscaling of the image based on quality information of the image obtained using a trained second AI model, and the second AI model may be trained using feature information of the image obtained from the first AI model.
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Patent Agency Ranking
公开(公告)号：EP3828811A1
公开(公告)日：2021-06-02
申请号：EP20166652.6
申请日：2020-03-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： NA, Sangkwon , KANG, Wooseok , KIM, Minho
Abstract: An electronic device is provided. The electronic device includes: a memory configured to include at least one instruction; and a processor configured to be connected to the memory to control the electronic device, and obtain an output image by upscaling an input image using an artificial intelligence model trained to upscale an image, wherein the processor is configured to control the electronic device to: obtain parameter information of the artificial intelligence model based on pre-processing related information performed on the input image, and upscale the input image using the artificial intelligence model corresponding to the obtained parameter information.
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7.发明公开
公开(公告)号：EP4506435A1
公开(公告)日：2025-02-12
申请号：EP24193592.3
申请日：2024-08-08
Applicant: Samsung Electronics Co., Ltd
Inventor： YANG, Seungrim , KIM, Minho , MOON, Deuk Kyu , WON, Nayoun , CHAE, Sue In , KIM, Tae-Gon , LEE, Jun Ho
Abstract: A method of manufacturing a semiconductor nanoparticle, the semiconductor nanoparticle manufactured therefrom, and an electronic device including the semiconductor nanoparticle. The method of manufacturing the semiconductor nanoparticle includes combining a first semiconductor nanocrystal that includes silver, a Group 13 element, and a chalcogen element, with a gallium precursor, a sulfur precursor, and a silver compound in a medium including an organic solvent; and heating the medium to a reaction temperature to obtain a crude solution including the semiconductor nanoparticles. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, and the size is greater than or equal to about 2 nm and less than or equal to about 50 nm.
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8.发明公开
公开(公告)号：EP4245825A1
公开(公告)日：2023-09-20
申请号：EP23162742.3
申请日：2023-03-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： WON, Nayoun , KIM, Tae-Gon , KIM, Minho , YANG, Seungrim , JUN, Shin Ae , JUNG, Yebin , JO, A Ra
IPC: C09K11/62
Abstract: A semiconductor nanoparticle, including silver, a Group 13 metal, and a chalcogen element, wherein the semiconductor nanoparticle emits a first light, the Group 13 metal includes gallium, and optionally further includes indium, aluminum, or a combination thereof, the chalcogen element includes sulfur, and optionally further includes selenium, the first light has a full width at half maximum of greater than or equal to about 5 nanometers (nm) to less than or equal to about 70 nm, the first light has a maximum emission wavelength of greater than or equal to about 500 nm to less than or equal to about 600 nm, the semiconductor nanoparticle has a quantum yield of greater than or equal to about 50%, a mole ratio of gallium to sulfur is greater than or equal to about 0.1:1 to less than or equal to about 1:1, and a charge balance value defined by Equation 1 herein.
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公开(公告)号：EP4167702A1
公开(公告)日：2023-04-19
申请号：EP22201793.1
申请日：2022-10-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： SONG, Younggul , SEOK, Junyeong , OH, Eun Chu , KIM, Minho , JANG, Byungchul
Abstract: A non-volatile memory device includes a substrate, a stack structure that includes a first gate layer that extends in a horizontal direction and a second gate layer that extends in the horizontal direction and is disposed apart from the first gate layer in a vertical direction, a plurality of first channel structures that penetrate in the vertical direction through a first channel region of the stack structure, a plurality of second channel structures that penetrate in the vertical direction through a second channel region of the stack structure, a first anti-fuse structure and a second anti-fuse structure that each penetrate in the vertical direction through an anti-fuse region of the stack structure, a first anti-fuse transistor that is electrically connected to the first gate layer through the first anti-fuse structure, and a second anti-fuse transistor that is electrically connected to the second gate layer through the second anti-fuse structure.
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公开(公告)号：EP4149230A1
公开(公告)日：2023-03-15
申请号：EP21826188.1
申请日：2021-06-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： JEONG, Wooyoung , KIM, Suyeon , KIM, Minho , PARK, Jinwoo , WOO, Yongjin , LEE, Jongmin
Abstract: An electronic device is disclosed. The electronic device may comprise: a housing comprising a metal portion, wherein the metal portion comprises a frame structure for forming a portion of the surface of the electronic device, and a plate structure extending into an inner space of the housing; a printed circuit board disposed on the plate structure; a camera module disposed on the plate structure, wherein the camera module comprises a connector coupled to the printed circuit board and the connector comprises a conductive pad electrically connected to a ground area of the camera module; a vapor chamber which is conductive and disposed between the plate structure and the printed circuit board and at least a portion of which faces the conductive pad of the connector; an electrical absorption member disposed between the vapor chamber and the conductive pad; an insulative adhesion member disposed between the vapor chamber and the plate structure; and a varistor for electrically connecting the vapor chamber and the metal portion. Various other embodiments identified from the specification are possible.
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