公开(公告)号：EP4440285A1

公开(公告)日：2024-10-02

申请号：EP24163242.1

申请日：2024-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： HEO, Chul Joon ,  PARK, Kyung Bae ,  PARK, Jeong Il ,  MINAMI, Daiki ,  SEO, Hwijoung ,  YUN, Sungyoung ,  LIM, Younhee ,  LIM, Juhyung

IPC: H10K59/60

CPC classification number: H10K59/60 ,  H10K59/35 ,  H10K59/12 ,  H10K59/876

Abstract: Disclosed are a display panel and an electronic device. The display panel may include a substrate, first, second, and third light emitting diodes on the substrate and configured to emit light of first, second, and third wavelength spectra in a visible light wavelength spectrum, respectively, and first, second, third organic photoelectric conversion diodes overlapping the first, second, and third light emitting diode along a thickness direction of the substrate, respectively, may be provided. Each of first, second, third organic photoelectric conversion diodes may be configured to selectively absorb a portion of the visible light wavelength spectrum and convert the absorbed light into an electrical signal.

公开(公告)号：EP4102574A1

公开(公告)日：2022-12-14

申请号：EP22174568.0

申请日：2022-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： HEO, Chul Joon ,  PARK, Kyung Bae ,  YUN, Sung Young ,  KIM, Hyeongju ,  FANG, Feifei ,  SEO, Hwijoung ,  LIM, Juhyung ,  CHOI, Taejin

IPC: H01L27/32 ,  H01L51/42 ,  H01L51/50

Abstract: A sensor-embedded display panel includes a substrate (110), a light emitting element (210, 220, 230) on the substrate and including a light emitting layer (212, 222, 232), and a photosensor (300) on the substrate and including a photoelectric conversion layer (330) in parallel with the light emitting layer (212, 222, 232) along an in-plane direction of the substrate, wherein the light emitting element (210, 220, 230) and the photosensor (300) each include a separate portion of a first common auxiliary layer (340) that is a single piece of material that extends continuously on the light emitting layer (212, 222, 232) and the photoelectric conversion layer (330), and a separate portion of a common electrode (320) on the first common auxiliary layer (340) and is configured to apply a common voltage to both the light emitting element (210, 220, 230) and the photosensor (330), and the photoelectric conversion layer (330) includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.