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1.
公开(公告)号:EP3850668A1
公开(公告)日:2021-07-21
申请号:EP20802673.2
申请日:2020-04-29
发明人: KIM, Myunghee , SUH, Jenghun , SHIM, Jaephil , KANG, Jihoon , OTA, Jitsuo
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公开(公告)号:EP4160701A1
公开(公告)日:2023-04-05
申请号:EP21872713.9
申请日:2021-08-11
发明人: KANG, Jihoon , SUH, Jenghun , OTA, Jitsuo , KIM, Myunghee
IPC分类号: H01L33/24 , H01L25/075 , H01L33/36 , H01L33/40 , H01L33/44
摘要: Disclosed are a micro LED and a display module including same, the micro LED comprising: a light-emitting surface; and a first electrode and a second electrode arranged on a surface opposite to the light-emitting surface. The disclosed micro LED comprises: a current diffusion layer to which the first electrode is electrically connected, and which has the light-emitting surface; a first cladding layer and a second cladding layer that are stacked on the current diffusion layer; an active layer arranged between the first cladding layer and the second cladding layer; and a current guiding unit arranged between the second electrode and the second cladding layer, and formed from a side surface of the micro LED to a position adjacent to the central part of the micro LED so that current flows while spaced from the side surface of the micro LED.
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公开(公告)号:EP3925013A1
公开(公告)日:2021-12-22
申请号:EP20834690.8
申请日:2020-06-24
发明人: KANG, Jihoon , OTA, Jitsuo , SUH, Jenghun , SHIM, Jaephil , KIM, Myunghee
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4.
公开(公告)号:EP3837722A1
公开(公告)日:2021-06-23
申请号:EP19883793.2
申请日:2019-11-14
发明人: OTA, Jitsuo , KANG, Jihoon , KIM, Sungtae , KIMURA, Shunsuke , CHA, Yongdok
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公开(公告)号:EP4160703A1
公开(公告)日:2023-04-05
申请号:EP21875954.6
申请日:2021-09-14
发明人: KANG, Jihoon , OTA, Jitsuo , KIM, Myunghee , SUH, Jenghun
摘要: Disclosed are a micro LED and a display module having same. The disclosed micro LED comprises: a first semiconductor layer having a light emission surface and electronically connected to a first electrode; a second semiconductor layer electronically connected to a second electrode; an active layer disposed between the first and second semiconductor layers; and a wavelength conversion layer stacked on the light emission surface of the first semiconductor layer and made of a semiconductor having a chalcopyrite-structure.
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