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    PHOTOELECTRIC CONVERSION DEVICE AND SENSOR AND ELECTRONIC DEVICE
    2.
    发明公开
    PHOTOELECTRIC CONVERSION DEVICE AND SENSOR AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：EP3819954A1

    公开(公告)日：2021-05-12

    申请号：EP20201312.4

    申请日：2020-10-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： MINAMI, Daiki ,  YUN, Sung Young ,  PARK, Kyung Bae ,  PARK, Sung Jun ,  HEO, Chul Joon

    IPC: H01L51/42

    Abstract: Disclosed are a photoelectric conversion device, and a sensor and an electronic device including the same. The photoelectric conversion device may include a first electrode and a second electrode and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes a first material and a second material, which form a pn junction, and a third material that is different from the first material and the second material. The third material is configured to modify a distribution of energy levels of the first material or the second material.

    IMAGE SENSORS AND ELECTRONIC DEVICES
    4.
    发明公开
    IMAGE SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：EP3859781A1

    公开(公告)日：2021-08-04

    申请号：EP20206719.5

    申请日：2020-11-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： PARK, Kyung Bae ,  JIN, Yong Wan ,  YUN, Sung Young ,  PARK, Sung Jun ,  FANG, Feifei ,  HEO, Chul Joon

    IPC: H01L27/146 ,  H01L27/30

    Abstract: An image sensor may (300) include a first photo-sensing device (100) on a semiconductor substrate (200) and configured to sense light of a first wavelength spectrum, and second (210) and third (220) photo-sensing devices integrated in the semiconductor substrate and configured to sense light of a second and third wavelength spectrum, respectively. The first photo-sensing device may overlap each of the second and third photo-sensing devices in a thickness direction of the semiconductor substrate. The second and third photo-sensing devices do not overlap in the thickness direction and each have an upper surface (210p, 220p), a lower surface (210q, 220q), and a doped region (210d, 220d) therebetween. The third photo-sensing device includes an upper surface deeper further from the upper surface of the semiconductor substrate than the upper surface of the second photo-sensing device and a doped region thicker than the doped region of the second photo-sensing device. The image sensor may omit the first photo-sensing device.

    DEVICES AND SENSORS AND ELECTRONIC DEVICES
    6.
    发明公开
    DEVICES AND SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：EP3787051A1

    公开(公告)日：2021-03-03

    申请号：EP20191529.5

    申请日：2020-08-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： PARK, Kyung Bae ,  SUGANUMA, Naotoshi ,  HEO, Chul Joon ,  PARK, Sung Jun ,  YUN, Sung Young

    IPC: H01L51/42 ,  H01L51/50

    Abstract: A device includes a first electrode and a second electrode, an active layer between the first electrode and the second electrode and a plurality of auxiliary layers between the first electrode and the active layer. The auxiliary layers include first and second auxiliary layers, the first auxiliary layer proximate to the active layer, the second auxiliary layer proximate to the first electrode. An energy level of the active layer, an energy level of the first auxiliary layer, an energy level of the second auxiliary layer, and a work function of the first electrode become deeper sequentially or shallower sequentially.

    SENSORS AND ELECTRONIC DEVICES
    7.
    发明公开
    SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：EP3910677A1

    公开(公告)日：2021-11-17

    申请号：EP21170957.1

    申请日：2021-04-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： PARK, Kyung Bae ,  PARK, Sung Jun ,  FANG, Feifei ,  YUN, Sung Young ,  LIM, Seon-Jeong ,  HEO, Chul Joon

    IPC: H01L27/30 ,  H01L27/146

    Abstract: A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.

    FINGERPRINT SENSORS AND FINGERPRINT SENSOR ARRAYS AND DEVICES
    8.
    发明公开
    FINGERPRINT SENSORS AND FINGERPRINT SENSOR ARRAYS AND DEVICES 审中-公开

    公开(公告)号：EP3739509A1

    公开(公告)日：2020-11-18

    申请号：EP20163096.9

    申请日：2020-03-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： LEE, Gae Hwang ,  PARK, Kyung Bae ,  PARK, Sung Jun ,  YUN, Sung Young ,  JIN, Yong Wan ,  HEO, Chul Joon

    IPC: G06K9/00

    Abstract: A fingerprint sensor may include first and second electrodes, a light absorption layer isolated from direct contact with the first and second electrodes, and an insulation layer between the first electrode and the light absorption layer and further between the second electrode and the light absorption layer. A reflective layer may be between the light absorption layer and the first electrode. The insulation layer may include a first insulation layer between the first electrode and the light absorption layer, and a second insulation layer between the second electrode and the light absorption layer. A fingerprint sensor array including a plurality of fingerprint sensors may at least partially expose a plurality of sub-pixels of a display panel on which the fingerprint sensor array is located.

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