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公开(公告)号：EP1657817A2
公开(公告)日：2006-05-17
申请号：EP05024448.2
申请日：2005-11-09
发明人： Park, Yun-kwon , Kim, Duck-hwan 505-803, Cheonggu Apt. , Nam, Kuang-woo Samsung Adv. Inst. of Technology , Song, In-sang , Yun, Seok-chul Samsung Adv. Inst. of Technology , Ha, Byeoung-ju , Kim, Jong-seok
CPC分类号： H03H9/0542 , H03H9/542 , H03H9/564 , H03H9/566
摘要： A filter formed of film bulk acoustic resonators (40,42,44,48,54,56,60) has a topology that enables a trimming inductor (58) to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators (54,56) each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor (58) is connected between the common electrode and ground potential. A third shunt resonator (60) is connected between the series-connected resonators and ground potential.
摘要翻译： 由薄膜体声共振器（40,42,44,48,54,56,60）形成的滤波器具有能够将修整电感器（58）制造在与谐振器阵列相同的衬底上的拓扑结构。 整个滤波器可以在单个芯片上制造，仅利用集成电路工艺。 在示例性实施例中，一对并联谐振器（54,56）各自具有连接到串联谐振器的一个电极。 两个并联谐振器的其他电极彼此共同连接。 修整电感器（58）连接在公共电极和地电位之间。 第三并联谐振器（60）连接在串联连接的谐振器和地电位之间。
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公开(公告)号：EP1657817A3
公开(公告)日：2007-07-11
申请号：EP05024448.2
申请日：2005-11-09
发明人： Park, Yun-kwon , Kim, Duck-hwan 505-803, Cheonggu Apt. , Nam, Kuang-woo Samsung Adv. Inst. of Technology , Song, In-sang , Yun, Seok-chul Samsung Adv. Inst. of Technology , Ha, Byeoung-ju , Kim, Jong-seok
CPC分类号： H03H9/0542 , H03H9/542 , H03H9/564 , H03H9/566
摘要： A filter formed of film bulk acoustic resonators (40,42,44,48,54,56,60) has a topology that enables a trimming inductor (58) to be fabricated on the same substrate as the resonator arrays. The entire filter can be fabricated on a single chip, utilizing only integrated circuit processes. In an exemplary embodiment, a pair of shunt resonators (54,56) each have one electrode connected to series-connected resonators. The other electrodes of the two shunt resonators are connected in common to one another. The trimming inductor (58) is connected between the common electrode and ground potential. A third shunt resonator (60) is connected between the series-connected resonators and ground potential.
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