专利检索 ap:("Samsung Electronics Co., Ltd." OR "POSTECH Research AND Business Development Foundation") AND inv:"JO, Yongjoo" 第 1 页

1.

发明公开
SPIN ORBIT TORQUE MATERIALS, MAGNETIC MEMORY DEVICE INCLUDING THE SAME, AND METHOD FOR FABRICATING THE SPIN ORBIT TORQUE MATERIALS 审中-公开

公开(公告)号：EP4447644A1

公开(公告)日：2024-10-16

申请号：EP24167934.9

申请日：2024-03-29

申请人： Samsung Electronics Co., Ltd. , POSTECH Research and Business Development Foundation

发明人： CHO, Won Joon , LEE, Daesu , JO, Yongjoo

IPC分类号： H10N50/01 , H10N50/10 , H10N50/85

摘要： A spin orbit torque (spin orbit torque, SOT) material may include a substrate and an epitaxial thin film including a plurality of sub-stacks on the substrate, a manufacturing method of the SOT material, and a magnetic memory device including the SOT material are provided.