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公开(公告)号：EP2787535A3
公开(公告)日：2014-12-10
申请号：EP14160368.8
申请日：2014-03-17
发明人： Lee, Cho-Young , Oh, Min-Seok , Lee, Yun-Seok , Hong, Jun-Ki
IPC分类号： H01L31/0336 , H01L31/18 , H01L31/074
CPC分类号： H01L31/1884 , H01L31/0336 , H01L31/074 , H01L31/18 , Y02E10/50
摘要： A solar cell includes an optical absorption layer; a buffer layer on the optical absorption layer, the buffer layer having a band gap energy gradient; and a transparent electrode layer on the buffer layer, wherein a band gap energy of a lower surface of the buffer layer is higher than a band gap energy of an upper surface of the buffer layer.
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公开(公告)号：EP2787535A2
公开(公告)日：2014-10-08
申请号：EP14160368.8
申请日：2014-03-17
发明人： Lee, Cho-Young , Oh, Min-Seok , Lee, Yun-Seok , Hong, Jun-Ki
IPC分类号： H01L31/032
CPC分类号： H01L31/1884 , H01L31/0336 , H01L31/074 , H01L31/18 , Y02E10/50
摘要： A solar cell includes an optical absorption layer; a buffer layer on the optical absorption layer, the buffer layer having a band gap energy gradient; and a transparent electrode layer on the buffer layer, wherein a band gap energy of a lower surface of the buffer layer is higher than a band gap energy of an upper surface of the buffer layer.
摘要翻译： 太阳能电池包括光吸收层; 在所述光吸收层上的缓冲层，所述缓冲层具有带隙能量梯度; 以及所述缓冲层上的透明电极层，其中，所述缓冲层的下表面的带隙能量高于所述缓冲层的上表面的带隙能量。
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公开(公告)号：EP2800147A2
公开(公告)日：2014-11-05
申请号：EP14160428.0
申请日：2014-03-18
发明人： Lee, Cho-Young , Oh, Min-Seok , Lee, Yun-Seok , Hong, Jun-Ki
IPC分类号： H01L31/032
CPC分类号： H01L31/1884 , H01L31/0336 , H01L31/074 , H01L31/18 , Y02E10/50
摘要： A solar cell includes an optical absorption layer; a buffer layer on the optical absorption layer, the buffer layer having a band gap energy gradient; and a transparent electrode layer on the buffer layer, wherein a band gap energy of a lower surface of the buffer layer is higher than a band gap energy of an upper surface of the buffer layer.
摘要翻译： 太阳能电池包括光吸收层; 在所述光吸收层上的缓冲层，所述缓冲层具有带隙能量梯度; 以及缓冲层上的透明电极层，其中缓冲层的下表面的带隙能量高于缓冲层的上表面的带隙能量。
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公开(公告)号：EP2731146A3
公开(公告)日：2014-09-03
申请号：EP13183814.6
申请日：2013-09-10
发明人： Lee, Doo-Youl , Park, Sang-Jin , Kang, Yoon-Mook , Kim, Hyoeng-Ki , Mo, Chan-Bin , Park, Young-Sang , Seo, Kyoung-Jin , Kim, Min-Sung , Hong, Jun-Ki , Lim, Heung-Kyoon , Song, Min-Chul , Park, Sung-Chan , Kim, Dong-Seop
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18 , H01L31/028 , H01L31/0236
CPC分类号： H01L31/065 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Provided are a photoelectric device and a method of manufacturing the photoelectric device. The photoelectric device includes: a semiconductor substrate that is formed of monocrystalline silicon and has first and second surfaces that are opposite to each other; a doping unit formed in the first surface of the semiconductor substrate; and an insulating layer that is formed between the doping unit and the second surface of the semiconductor substrate, wherein the doping unit includes: a first semiconductor layer including a first dopant doped in the monocrystalline silicon; and a second semiconductor layer including a second dopant doped in the monocrystalline silicon. Accordingly, carrier recombination loss due to defects of the semiconductor substrate may be reduced, and an open-circuit voltage may be increased. Also, as an emitter and a base that separate and collect carriers are formed of monocrystalline silicon like the semiconductor substrate, carrier collecting efficiency and photoelectric conversion efficiency may be improved.
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公开(公告)号：EP2731146A2
公开(公告)日：2014-05-14
申请号：EP13183814.6
申请日：2013-09-10
发明人： Lee, Doo-Youl , Park, Sang-Jin , Kang, Yoon-Mook , Kim, Hyoeng-Ki , Mo, Chan-Bin , Park, Young-Sang , Seo, Kyoung-Jin , Kim, Min-Sung , Hong, Jun-Ki , Lim, Heung-Kyoon , Song, Min-Chul , Park, Sung-Chan , Kim, Dong-Seop
IPC分类号： H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号： H01L31/065 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Provided are a photoelectric device and a method of manufacturing the photoelectric device. The photoelectric device includes: a semiconductor substrate that is formed of monocrystalline silicon and has first and second surfaces that are opposite to each other; a doping unit formed in the first surface of the semiconductor substrate; and an insulating layer that is formed between the doping unit and the second surface of the semiconductor substrate, wherein the doping unit includes: a first semiconductor layer including a first dopant doped in the monocrystalline silicon; and a second semiconductor layer including a second dopant doped in the monocrystalline silicon. Accordingly, carrier recombination loss due to defects of the semiconductor substrate may be reduced, and an open-circuit voltage may be increased. Also, as an emitter and a base that separate and collect carriers are formed of monocrystalline silicon like the semiconductor substrate, carrier collecting efficiency and photoelectric conversion efficiency may be improved.
摘要翻译： 本发明提供一种光电装置及其制造方法。 该光电器件包括：半导体衬底，由单晶硅形成并具有彼此相对的第一和第二表面; 形成在半导体衬底的第一表面中的掺杂单元; 以及形成在所述掺杂单元与所述半导体衬底的所述第二表面之间的绝缘层，其中所述掺杂单元包括：第一半导体层，所述第一半导体层包括掺杂在所述单晶硅中的第一掺杂剂; 以及包括掺杂在单晶硅中的第二掺杂剂的第二半导体层。 因此，可以减少由于半导体衬底的缺陷导致的载流子复合损失，并且可以增加开路电压。 而且，由于与半导体衬底一样由分离和收集载流子的发射极和基极由单晶硅形成，所以可以提高载流子收集效率和光电转换效率。
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