摘要:
An electron emission device is disclosed. The electron emission device includes a cathode electrode including a main electrode having an opening, ii) a plurality of isolated electrodes on each of which each of plurality of electron emission units is located, and iii) at least one resistance layer electrically connecting the main electrode and the plurality of isolated electrodes. The plurality of isolated electrodes are located within the opening and form gaps with the main electrode. A resistance between the main electrode and one of the plurality of isolated electrodes is different from that between the main electrode and the other isolated electrodes.
摘要:
An electron emission device includes a substrate, cathode and gate electrodes placed on the substrate in an insulated manner, and electron emission regions electrically connected to the cathode electrodes. Each of the cathode electrodes includes a line electrode having a groove at one lateral side surface thereof, and isolation electrodes formed on the substrate exposed through the groove such that the isolation electrodes are isolated from the line electrode. The electron emission regions are placed on the isolation electrodes and a resistance layer electrically connects the isolation electrodes to the line electrode.
摘要:
An electron emission device includes gate electrodes (6) formed on a substrate (2). The gate electrodes are located on a first plane. An insulating layer (8) is formed on the gate electrodes. Cathode electrodes (10) are formed on the insulating layer. Electron emission regions (12) are electrically connected to the cathode electrodes. The electron emission regions are located on a second plane. In addition, the electron emission device includes counter electrodes (18) placed substantially on the second plane of the electron emission regions. The gate electrodes and the counter electrodes are for receiving a same voltage, and a distance, D, between at least one of the electron emission regions and at least one of the counter electrodes satisfies the following condition: 1(µm)≤D≤28.1553+1.7060t(µm), where t indicates a thickness of the insulating layer.
摘要:
An electron emission device is disclosed. The electron emission device includes a cathode electrode including a main electrode having an opening, ii) a plurality of isolated electrodes on each of which each of plurality of electron emission units is located, and iii) at least one resistance layer electrically connecting the main electrode and the plurality of isolated electrodes. The plurality of isolated electrodes are located within the opening and form gaps with the main electrode. A resistance between the main electrode and one of the plurality of isolated electrodes is different from that between the main electrode and the other isolated electrodes.
摘要:
An electron emission device includes a substrate; a cathode electrode (14) formed on the substrate; a gate electrode (18) crossing the cathode electrode and insulated from the cathode electrode; and an electron emission region (22) electrically connected to the cathode electrode. The cathode electrode includes a main electrode (141) with an inner opening portion, an isolate electrode (142) placed in the opening portion and spaced apart from the main electrode by a distance, and a resistance layer (143) disposed between the main electrode and the isolate electrode. The isolate electrode has a via hole. The electron emission region contacts the isolate electrode, and is placed in the via hole. The isolate electrode has a first height, and the electron emission region has a second height smaller than the first height.
摘要:
An electron emission device includes i) a substrate (10), ii) a cathode electrode (16) on the substrate, having a first opening (1611), and comprising an ultraviolet non-transmitting material, iii) an electron emission region (30) in the first opening (1611) and for emitting electrons, and iv) a gate electrode (20) electrically insulated from the cathode electrode and having a second opening (201) through which the electrons emitted from the electron emission region pass. The ultraviolet transmittance of the gate electrode is about 30% or more. A distance between a first imaginary line (C1) passing through a center of the electron emission region and normal to a plane surface of the substrate, and a second imaginary line (C2) passing through a center of the second opening and normal to the plane surface of the substrate is about 0.5 µm or less.